A Modified General Diode Equation

The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation also accounts for the series bulk resistance of a diode. Despite a reasonable agreement of the equation with measured IV characteristics, it is shown here that the equation is incompatible with basic theories of circuits and systems. Therefore, a modification in the equation is proposed to remove this incompatibility. This modified equation leads to a compact model of a p-n junction diode that has an excellent agreement with the measured IV characteristics.

Simultaneous laser doping and annealing to form lateral p–n junction diode structure on silicon carbide films

Laser-assisted doping of intrinsic silicon carbide (SiC) films deposited on Si (100) substrates by pulsed laser deposition (PLD) method and its influence on simultaneous annealing of the thin film is studied. PLD grown intrinsic SiC films are transformed to p-type SiC and n-type SiC, using laser-assisted doping in aqueous aluminum chloride and phosphoric solutions, respectively. Simultaneous doping and annealing of the SiC film are observed during laser-assisted doping. By precisely positioning the selectively doped region, lateral p–n diodes are formed on the SiC films without using any mask. Electric characteristics confirmed the formation of a lateral p–n diode structure. Numerical analysis of temperature distribution along the depth of the SiC films explains the mechanism of simultaneous doping and annealing during the laser treatment.