Comment on “Design and circuit simulation of nanoscale vacuum channel transistors” by J. Xu, Y. Qin, Y. Shi, Y. Yang and X. Zhang, Nanoscale Adv., 2020, 2, 3582

This comment aims to improve the field electron emission theory in a recent article about nanoscale vacuum transistors.

Reply to the ‘Comment on “Design and circuit simulation of nanoscale vacuum channel transistors”’ by R. Forbes, Nanoscale Adv., 2020, 2, DOI: 10.1039/D0NA00687D

Focus on the simulation results of structural parameters and circuit behavior of nanoscale vacuum transistors.

High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistors

Rational design of two-dimensional tin selenide (SnSe) nanostructures enables high-performance field emission for developing nanoscale vacuum transistors.