Исследование пространственной и токовой динамики оптических потерь в полупроводниковых лазерных гетероструктурах методом оптического зондирования

The spatiotemporal dynamics of optical losses and carrier density in a heterostructure of a semiconductor laser with a segmented contact were studied using an optical probe technique based on the coupling of probe radiation with a wavelength of 1560 nm into a semiconductor laser chip under investigation based on an AlGaAs/ InGaAs/ GaAs heterostructure and emitting at a wavelength of 1010 nm. It has been shown that the use of a probe beam with a wavelength of 1560 nm makes it possible to ensure the sensitivity of the measurement of internal optical losses of no worse than 1 cm-1. The use of a segmented design of the current pumping region made it possible to estimate the absolute value of internal optical losses. It was shown that a change in the configuration of the Fabry-Perot eigenmodes of the laser affects the distribution of charge carriers and internal optical losses both in the current pump region and in the passive part of the laser chip that is not pumped by the current.