This paper discusses a photo-thermal rotational semiconductor medium with
ini?tial stress, and voids by considering two thermoelastic theories:
Lord-Shulman and Dual-Phase-Lag models. The equations of motion,
temperature, voids, and photothermal have been investigated under two
generalized thermoelastic theory. The technique of normal mode has been
applied to solve the differential equa?tions system with appropriate
boundary conditions. Quantities of physical interest such as displacement,
stress components, concentration, temperature, and carrier density are
calculated and displayed graphically to demonstrate the effect of the
external parameters. The obtained results, by using the two theories, show
that the dual-phase-lag theory gives an origin results comparing with
obtained results by Lord-Shulman theory. By neglecting the initial stress
and voids, and considering the only dual-phase-lag theory, then the results
obtained in this paper are deduced to the results of Abbas et al. [1].