GeSnOI mid-infrared laser technology

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge0.9Sn0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

Non-planar Boron Lewis Acids Taking the Next Step: Development of Tunable Lewis Acids, Lewis Superacids and Bifunctional Catalysts

Although boron Lewis acids commonly adopt a trigonal planar geometry, a number of compounds in which the trivalent boron atom is located in a pyramidal environment have been described. This review will highlight the recent developments of the chemistry and applications of non-planar boron Lewis acids, including a series of non-planar triarylboranes derived from the triptycene core. A thorough analysis of the properties and of the influence of the pyramidalization of boron Lewis acids on their stereoelectronic properties and reactivities is presented based on recent theoretical and experimental studies.1 Non-planar Trialkylboranes2 Non-planar Alkyl and Aryl-Boronates3 Non-planar Triarylboranes and Alkenylboranes3.1 Previous Investigations on Bora Barrelenes and Triptycenes3.2 Recent Work on Boratriptycenes from Our Research Group4 Applications of Non-planar Boranes4.1 Non-planar Alkyl Boranes and Boronates4.2 Non-planar Triarylboranes (Boratriptycenes)5 Other Non-planar Group 13 Lewis Acids6 Further Work and Perspectives

On the Metrics of Rigid Body Displacements for Infinite and Finite Bodies

This paper presents a critical analysis of the metric of rigid body displacements obtained from the so-called kinematic mapping. It is shown that this metric is not suitable for finite rigid bodies. The paper also addresses the metrics obtained for the planar group, as it can be regarded as a subgroup of the group of all rigid body displacements, which is denoted here as the Euclidean group. Finally, the paper proposes some metrics for the set of spatial and planar displacements for a finite rigid body, undergoing a finite displacement.