Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe2 quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

Hidden energy levels? Carrier transport ability of CdS/CdS1−xSex quantum dot solar cells impacted by Cd–Cd level formation

Hidden Cd–Cd energy levels formed in Cd–chalcogenides impact both light harvesting and electron transport in quantum dot-sensitized solar cells.

A new model for the lattice dynamics of Zn–Cd chalcogenides

A noncentral second neighbour ionic model is proposed for calculating frequency wave vector dispersion relations for the normal modes of vibrations for zinc and cadmium tellurides crystallizing in the zinc blende structure. The model takes into account the change in energy owing to rotation of bonds. The calculated phonon frequencies show a reasonably satisfactory agreement with the available optic data.