semiconducting silicides
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2015 ◽  
Vol 67 ◽  
pp. 75-80 ◽  
Author(s):  
Motoharu Imai ◽  
Yukihiro Isoda ◽  
Haruhiko Udono




2013 ◽  
Vol 10 (12) ◽  
pp. 1658-1660 ◽  
Author(s):  
D. B. Migas ◽  
V. E. Borisenko


2011 ◽  
Vol 519 (24) ◽  
pp. 8456-8460 ◽  
Author(s):  
Noriyuki Uchida ◽  
Takehide Miyazaki ◽  
Yusuke Matsushita ◽  
Kenichiro Sameshima ◽  
Toshihiko Kanayama


2008 ◽  
Vol 113 ◽  
pp. 012043
Author(s):  
M Baleva ◽  
M Marinova ◽  
A Atanassov


2008 ◽  
Vol 8 (2) ◽  
pp. 768-774
Author(s):  
M. Baleva ◽  
A. Atanassov ◽  
M. Marinova ◽  
G. Zlateva ◽  
N. Todorov

Samples, representing Si matrix with nanoformations of the semiconducting silicides β-FeSi2 and Mg2Si are studied by Raman scattering. The unpolarized Raman spectra of the samples are interpreted in the frameworkof the appearance of interface-phonon polaritons. The theoretical dispersion relations of the interface-phonon polaritons in the system Si/silicide/Si are obtained from the Maxwell equations. The correspondence of the theoretical calculations and the experimental observations appeared to be sufficiently good. An evolution of the features in the Raman spectra on the experimental conditions is observed.



2004 ◽  
Vol 461 (1) ◽  
pp. 141-147 ◽  
Author(s):  
L.I Ivanenko ◽  
V.L Shaposhnikov ◽  
A.B Filonov ◽  
A.V Krivosheeva ◽  
V.E Borisenko ◽  
...  


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