indium oxide film
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2021 ◽  
Vol 1160 ◽  
pp. 51-55
Author(s):  
Cheng Ying Shi ◽  
Guang Hong Wang

Hafnium and Hydrogen co-doped indium oxide films (IHFO:H) were prepared by radio frequency magnetron sputtering technology. The effect of hydrogen-donor dopant on the structural, optical and electrical properties of the films was investigated systematically. The resistivity of the IHFO:H film decreased by 2.4×10-4 Ω cm and the mobility improved by 8.2 cm2/Vs compared with Hafnium oxide doped indium oxide film. Employing the IHFO:H film as an electrode for a solar cell can improve efficiency.


2019 ◽  
Vol 11 (49) ◽  
pp. 45586-45595 ◽  
Author(s):  
Can Han ◽  
Luana Mazzarella ◽  
Yifeng Zhao ◽  
Guangtao Yang ◽  
Paul Procel ◽  
...  

2019 ◽  
Vol 8 (6) ◽  
pp. Q101-Q105
Author(s):  
T. Nishihara ◽  
T. Kamioka ◽  
H. Kanai ◽  
Y. Ohshita ◽  
S. Yasuno ◽  
...  

2018 ◽  
Vol 26 (6) ◽  
pp. 7204 ◽  
Author(s):  
Hongyu Ji ◽  
Bo Zhang ◽  
Wei Wang ◽  
Longfeng Lv ◽  
Jingling Shen

2015 ◽  
Vol 31 (14) ◽  
pp. 1794-1799 ◽  
Author(s):  
A. Pruna ◽  
D. Pullini ◽  
D. Tamvakos ◽  
A. Tamvakos ◽  
D. Busquets-Mataix

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