Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

System design and new applications for atomic force microscope based on tunneling

The design of atomic force microscopy (AFM) with high resolution is introduced in this paper. Mainly, we have developed the system design of the apparatus based on tunneling. AFM.IPC-208B, this kind of apparatus combines scanning tunnel microscopy (STM) and AFM availability, and its lens body with original frame enhances the capability of the machine. In order to analyze the performance of AFM.IPC-208B, as a new tool in the field of Life Science, we make use of the system to study natural mica and molecular protein structures of Cattle-insulin and human antibody immunoglobulin G (IgG) coupled with staphylococcus protein A (SPA). As the results of new applications, the resolution of AFM.IPC-208B is proved to be 0.1 nm, and these nanometer measurement results provide much valuable information for the study of small molecular proteins and HIV experiments.