cobalt disilicide
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scholarly journals Quantitative Evaluation of Cobalt Disilicide/Si Interfacial Roughness

2017 ◽  
Vol 6 (5) ◽  
pp. P345-P349 ◽  
Author(s):  
Jing Yang ◽  
Jun Feng ◽  
Kecheng Li ◽  
Harish B. Bhandari ◽  
Zhefeng Li ◽  
...  
Keyword(s):  
Quantitative Evaluation ◽  
Cobalt Disilicide ◽  
Interfacial Roughness

scholarly journals Ultralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Silicon

ACS Nano ◽  
2016 ◽  
Vol 11 (1) ◽  
pp. 516-525 ◽  
Author(s):  
Shao-Pin Chiu ◽  
Sheng-Shiuan Yeh ◽  
Chien-Jyun Chiou ◽  
Yi-Chia Chou ◽  
Juhn-Jong Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Cobalt Disilicide

Formation of epitaxial cobalt disilicide thin film by solution processing

2014 ◽  
Vol 7 (5) ◽  
pp. 055503 ◽  
Author(s):  
Ryo Kawajiri ◽  
Hideyuki Takagishi ◽  
Yasuo Matsuki ◽  
Tadaoki Mitani ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Solution Processing ◽  
Cobalt Disilicide

Increased carbon nanotube area density after catalyst generation from cobalt disilicide using a cyclic reactive ion etching approach

2014 ◽  
Vol 115 (14) ◽  
pp. 144302 ◽  
Author(s):  
Rongsi Xie ◽  
Can Zhang ◽  
Bingan Chen ◽  
Marleen van der Veen ◽  
Guofang Zhong ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Reactive Ion Etching ◽  
Cobalt Disilicide ◽  
Ion Etching ◽  
Area Density

Selective nucleation induced by defect nanostructures: A way to control cobalt disilicide precipitation during ion implantation

2012 ◽  
Vol 112 (12) ◽  
pp. 123504 ◽  
Author(s):  
F. Fortuna ◽  
M.-A. Nguyen ◽  
M.-O. Ruault ◽  
M. A. Kirk ◽  
V. A. Borodin ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Cobalt Disilicide

Growth of vertically-aligned carbon nanotube forests on conductive cobalt disilicide support

2010 ◽  
Vol 108 (2) ◽  
pp. 024311 ◽  
Author(s):  
C. Zhang ◽  
F. Yan ◽  
C. S. Allen ◽  
B. C. Bayer ◽  
S. Hofmann ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Cobalt Disilicide ◽  
Vertically Aligned ◽  
Carbon Nanotube Forests

Nucleation and growth of cobalt disilicide precipitates during in situ transmission electron microscopy implantation

2008 ◽  
Vol 104 (3) ◽  
pp. 033527 ◽  
Author(s):  
M.-O. Ruault ◽  
F. Fortuna ◽  
V. A. Borodin ◽  
M. G. Ganchenkova ◽  
M. A. Kirk
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Nucleation And Growth ◽  
Cobalt Disilicide ◽  
Transmission Electron

Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 133-138 ◽  
Author(s):  
V.A. Borodin ◽  
M.O. Ruault ◽  
Mariya G. Ganchenkova ◽  
F. Fortuna
Keyword(s):  
Ab Initio ◽  
Cobalt Disilicide ◽  
Ab Initio Simulations ◽  
Different Types ◽  
Nucleation Mechanisms ◽  
In Situ Observations

The paper presents the results of experimental in-situ observations of cobalt disilicide nucleation in Co+ implanted silicon and ab initio simulations of energies of small cobalt and cobaltvacancy clusters. Based on these results, microscopic nucleation mechanisms of different types of CoSi2 precipitates are discussed.

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