Microscopic Mechanisms of Cobalt Disilicide Nucleation in Silicon

2005 ◽  
pp. 133-138
Author(s):  
V.A. Borodin ◽  
M.O. Ruault ◽  
Mariya G. Ganchenkova ◽  
F. Fortuna
Keyword(s):  
Cobalt Disilicide

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process

2001 ◽  
Vol 670 ◽  
Author(s):  
Hidekazu Sato ◽  
Takae Sukegawa ◽  
Toshifumi Mori ◽  
Kousuke Suzuki ◽  
Haruhisa Mori
Keyword(s):  
Sheet Resistance ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Cobalt Silicide ◽  
Fabrication Technology ◽  
Process Technology ◽  
Cobalt Disilicide ◽  
Gate Structure ◽  
Electrode Fabrication ◽  
The Relationship

ABSTRACTThis paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi2) formation. Particularly, we investigate the relationship between sheet resistance of CoSi2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi2/poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.

Superconducting Properties of Cobalt Disilicide

1953 ◽  
Vol 89 (2) ◽  
pp. 439-441 ◽  
Author(s):  
B. T. Matthias ◽  
J. K. Hulm
Keyword(s):  
Superconducting Properties ◽  
Cobalt Disilicide

Dependence of Buried CoSi2 Resistivity on ION Implantation and Annealing Conditions1

1991 ◽  
Vol 235 ◽  
Author(s):  
Fereydoon Namavar ◽  
N. M. Kalkhoran ◽  
J. M. Manke ◽  
L. Luo ◽  
J. T. McGinn
Keyword(s):  
Electrical Resistivity ◽  
Ion Implantation ◽  
Material Properties ◽  
Crystalline Quality ◽  
Cobalt Disilicide ◽  
Implantation Temperature ◽  
Annealing Conditions

ABSTRACTWe have investigated the dependence of electrical and material properties of buried CoSi2 layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi2 layers depend strongly on the implantation temperature. CoSi2 layers with the lowest resistivity and best crystalline quality (Xmin as low as 3.6%) were obtained from samples implanted at 300°C-400°C. Implantation at higher temperatures (e.g., 580°C) produced cobalt disilicide layers with significantly higher electrical resistivity and a Xmin of about 10.7%.

The diffusion of elements implanted in films of cobalt disilicide

1988 ◽  
Vol 64 (6) ◽  
pp. 2973-2980 ◽  
Author(s):  
O. Thomas ◽  
P. Gas ◽  
A. Charai ◽  
F. K. LeGoues ◽  
A. Michel ◽  
...  
Keyword(s):  
Cobalt Disilicide

Formation of epitaxial cobalt disilicide thin film by solution processing

2014 ◽  
Vol 7 (5) ◽  
pp. 055503 ◽  
Author(s):  
Ryo Kawajiri ◽  
Hideyuki Takagishi ◽  
Yasuo Matsuki ◽  
Tadaoki Mitani ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Solution Processing ◽  
Cobalt Disilicide

TEM and HREM Investigation of The Precipitation of Cobalt and Nickel In Polycrystalline Silicon

1991 ◽  
Vol 238 ◽  
Author(s):  
H. J. Möller ◽  
Juyong Chung ◽  
Lan Huang
Keyword(s):  
Grain Boundaries ◽  
Lattice Mismatch ◽  
Large Angle ◽  
Three Dimensional ◽  
Cobalt Disilicide ◽  
Surface Source ◽  
High Resolution Tem ◽  
Nickel Disilicide ◽  
Micrometer Size ◽  
Cobalt And Nickel

ABSTRACTThe precipitation behavior of cobalt and nickel at grain boundaries in multicrystalline silicon is investigated. The metals are diffused into the specimens from a surface source between 800 -1000 °C and the precipitation after cooling is studied by conventional and high resolution TEM. Cobalt and nickel disilicide precipitates nucleate both in the bulk and at grain boundaries. They form few large (micrometer size) plate-like or three-dimensional precipitates depending on the cooling rate. Cobalt disilicide with a slightly larger lattice mismatch has a higher tendency to nucleate at large angle grain boundaries. Both suicides nucleate preferentially at coherent twin boundaries forming a few atomic layers thick platelet parallel to the {111} twin plane. HREM and image simulations are performed to analyze the Si / MS12 / twin interface structure (M = Co, Ni).

Growth of vertically-aligned carbon nanotube forests on conductive cobalt disilicide support

2010 ◽  
Vol 108 (2) ◽  
pp. 024311 ◽  
Author(s):  
C. Zhang ◽  
F. Yan ◽  
C. S. Allen ◽  
B. C. Bayer ◽  
S. Hofmann ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Cobalt Disilicide ◽  
Vertically Aligned ◽  
Carbon Nanotube Forests

Thin Films of CoSi2 Co-Deposited onto Si1-xGexAlloys

1996 ◽  
Vol 448 ◽  
Author(s):  
Peter T. Goeller ◽  
Boyan I. Boyanov ◽  
Dale E. Sayers ◽  
Robert J. Nemanich
Keyword(s):  
Annealing Temperature ◽  
Sacrificial Layer ◽  
Phase Segregation ◽  
Cobalt Disilicide ◽  
Preparation Methods ◽  
Thermal Budget ◽  
Xrd Patterns ◽  
Low Thermal Budget ◽  
Deposited Films ◽  
Strained Sige

AbstractCobalt disilicide films have been formed on strained epitaxial Si0.80Ge0.20/Si(100) alloys via co-deposition of silicon and cobalt. Co-deposition is shown to improve the epitaxy and prevent the phase segregation commonly observed with the formation of Co/SiGe contacts using other methods such as the direct deposition of cobalt onto SiGe or the sequential deposition of a silicon sacrificial layer and cobalt onto SiGe. EXAFS measurements at the cobalt K edge indicate that co-deposited films annealed at 500–700° C are indeed crystalline CoSi2 throughout this temperature range. The XRD patterns of the co-deposited films do not exhibit any of the CoSi2 (111), (220) or (311) peaks normally associated with other preparation methods. The sheet resistance and r.m.s. roughness of the CoSi2 films increase monotonically with annealing temperature. These results indicate that co-deposited films are epitaxial to the (100)-oriented SiGe substrate and suggest that low thermal budget, low resistivity contacts to strained SiGe can be grown with this method. Issues related to the presence of Ge at the CoSi2/substrate interface will be discussed.

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