Simulation of Semiconductor Processes and Devices 2007
Latest Publications

TOTAL DOCUMENTS

109
(FIVE YEARS 0)

H-INDEX

5
(FIVE YEARS 0)

Published By Springer Vienna

9783211728604
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs

2007 ◽  
pp. 405-408
Author(s):  
Seong-Dong Kim ◽  
Bin (Frank) Yang ◽  
Shreesh Narasimha ◽  
Andrew Waite ◽  
Karen Nummy ◽  
...  
Keyword(s):  
Doping Profile

Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation

2007 ◽  
pp. 257-260 ◽  
Author(s):  
Yingda Cheng ◽  
Irene M. Gamba ◽  
Armando Majorana ◽  
Chi-Wang Shu
Keyword(s):  
Boltzmann Equation ◽  
Discontinuous Galerkin ◽  
Semiconductor Boltzmann Equation

Atomistic study of Metal/High-K interface

2007 ◽  
pp. 437-440
Author(s):  
Pierre-Yves Prodhomme ◽  
Philippe Blaise ◽  
Fabien Fontaine-Vive ◽  
Jacky Even ◽  
Marius Orlowski
Keyword(s):  
High K ◽  
Atomistic Study

Three-Dimensional Sacrificial Etching

2007 ◽  
pp. 433-436
Author(s):  
Johann Cervenka ◽  
Hajdin Ceric ◽  
Otmar Ertl ◽  
Siegfried Selberherr
Keyword(s):  
Three Dimensional ◽  
Sacrificial Etching

scholarly journals Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation

2007 ◽  
pp. 425-428
Author(s):  
T. Ichikawa ◽  
T. Takase ◽  
N. Tamaoki
Keyword(s):  
Plasma Etching ◽  
Ar Plasma

Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias

2007 ◽  
pp. 41-44 ◽  
Author(s):  
Chaffra A. Awo-Affouda ◽  
Max O. Bloomfield ◽  
Timothy S. Cale
Keyword(s):  
Grain Boundary ◽  
Strain Energy ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
3D Ic ◽  
Curvature Driven
Load More ...
Sign in / Sign up

Export Citation Format

Share Document