Simulation of Semiconductor Processes and Devices 2007
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Published By Springer Vienna

9783211728604

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Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_108 ◽

2007 ◽

pp. 445-448

Author(s):

Hong-Hyun Park ◽

Sung-Min Hong ◽

Seonghoon Jin ◽

Hong Shick Min ◽

Young June Park

Keyword(s):

Green’S Function ◽

Green's Function ◽

Nanoscale Devices ◽

Function Formalism ◽

Noise Simulation ◽

Non Equilibrium Green’S Function ◽

Green's Function Formalism ◽

Non Equilibrium

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Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_46 ◽

2007 ◽

pp. 193-196

Author(s):

A. T. Pham ◽

C. Jungemann ◽

B. Meinerzhagen

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First-Principles Investigation on Oxide Trapping

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_38 ◽

2007 ◽

pp. 157-160 ◽

Author(s):

W. Gös ◽

T. Grasser

Keyword(s):

First Principles

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Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_98 ◽

2007 ◽

pp. 405-408

Author(s):

Seong-Dong Kim ◽

Bin (Frank) Yang ◽

Shreesh Narasimha ◽

Andrew Waite ◽

Karen Nummy ◽

...

Keyword(s):

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Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_76 ◽

2007 ◽

pp. 317-320 ◽

Author(s):

Hans Kosina ◽

Oliver Triebl ◽

Tibor Grasser

Keyword(s):

Diffusion Equation ◽

Shape Functions ◽

Convection Diffusion ◽

Convection Diffusion Equation ◽

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Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_73 ◽

2007 ◽

pp. 305-308 ◽

Author(s):

O. M. Nayfeh ◽

D. A. Antoniadis

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Hydrodynamic Simulation

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Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_61 ◽

2007 ◽

pp. 257-260 ◽

Author(s):

Yingda Cheng ◽

Irene M. Gamba ◽

Armando Majorana ◽

Chi-Wang Shu

Keyword(s):

Boltzmann Equation ◽

Discontinuous Galerkin ◽

Semiconductor Boltzmann Equation

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Atomistic study of Metal/High-K interface

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_106 ◽

2007 ◽

pp. 437-440

Author(s):

Pierre-Yves Prodhomme ◽

Philippe Blaise ◽

Fabien Fontaine-Vive ◽

Jacky Even ◽

Marius Orlowski

Keyword(s):

High K ◽

Atomistic Study

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Three-Dimensional Sacrificial Etching

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_105 ◽

2007 ◽

pp. 433-436

Author(s):

Johann Cervenka ◽

Hajdin Ceric ◽

Otmar Ertl ◽

Siegfried Selberherr

Keyword(s):

Three Dimensional ◽

Sacrificial Etching

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Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_103 ◽

2007 ◽

pp. 425-428

Author(s):

T. Ichikawa ◽

T. Takase ◽

N. Tamaoki

Keyword(s):

Plasma Etching ◽

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