scholarly journals Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation

2007 ◽  
pp. 425-428
Author(s):  
T. Ichikawa ◽  
T. Takase ◽  
N. Tamaoki
Keyword(s):  
Plasma Etching ◽  
Ar Plasma

Effects of the inductively coupled Ar plasma etching on the performance of (111) face CdZnTe detector

2020 ◽  
Vol 109 ◽  
pp. 104929 ◽  
Author(s):  
Bing Song ◽  
Jijun Zhang ◽  
Xiaoyan Liang ◽  
Shuhao Zhao ◽  
Jiahua Min ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cdznte Detector ◽  
Inductively Coupled ◽  
Ar Plasma

Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO

2003 ◽  
Vol 83 (15) ◽  
pp. 3105-3107 ◽  
Author(s):  
W. T. Lim ◽  
I. K. Baek ◽  
J. W. Lee ◽  
E. S. Lee ◽  
M. H. Jeon ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Etching ◽  
Bulk Single Crystal ◽  
Temperature Dependent ◽  
Ar Plasma

Effect of UV Irradiation on Ar-Plasma Etching Characteristics of GaN

2013 ◽  
Vol 2 (3) ◽  
pp. P110-P113 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Keiji Nakamura ◽  
Masahito Niibe ◽  
Retsuo Kawakami ◽  
Noriyoshi Ito ◽  
...  
Keyword(s):  
Uv Irradiation ◽  
Plasma Etching ◽  
Ar Plasma

Electronic Properties Of Defects Formed In n-Si During Sputter-Etching In An Ar Plasma

1996 ◽  
Vol 442 ◽  
Author(s):  
P. N. K. Deenapanray ◽  
F. D. Auret ◽  
C. Schutte ◽  
G. Myburg ◽  
W. E. Meyer ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Deep Level ◽  
High Energy ◽  
Barrier Heights ◽  
Opposite Trend ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Ar Plasma ◽  
Transient Spectroscopy ◽  
Sputter Etching

AbstractWe have employed current-voltage (IV), capacitance-voltage (CV) and deep level transient spectroscopy (DLTS) techniques to characterise the defects induced in n-Si during RF sputter-etching in an Ar plasma. The reverse leakage current, at a bias of 1 V, of the Schottky barrier diodes fabricated on the etched samples was found to decrease with etch time reaching a minimum at 6 minutes and thereafter increased. The barrier heights followed the opposite trend. The plasma processing introduced six prominent deep levels below the conduction band of the substrate. A comparison with the defects induced during high energy (MeV) alpha-particle, proton and electron irradiation of the same material revealed that plasma-etching created the VO- and VP-centres, and V2-10. Some of the remaining sputter-etching-induced (SEI) defects have tentatively been related to those formed during either 1 keV He- or Ar-ion bombardment.

The influence of CH4/H2/Ar plasma etching on the conductivity ofn‐type gallium nitride

1995 ◽  
Vol 78 (10) ◽  
pp. 6132-6134 ◽  
Author(s):  
B. Molnar ◽  
C. R. Eddy ◽  
K. Doverspike
Keyword(s):  
Gallium Nitride ◽  
Plasma Etching ◽  
Ar Plasma

Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

2009 ◽  
Vol 404 (22) ◽  
pp. 4376-4378 ◽  
Author(s):  
F.D. Auret ◽  
S.M.M. Coelho ◽  
G. Myburg ◽  
P.J. Janse van Rensburg ◽  
W.E. Meyer
Keyword(s):  
Plasma Etching ◽  
Ar Plasma
Sign in / Sign up

Export Citation Format

Share Document