IEE Proceedings I Solid State and Electron Devices
Latest Publications

TOTAL DOCUMENTS

465

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By Institution Of Electrical Engineers

0143-7100

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Some observations on the failure locus of npn transistors and its improvement using graded collector structures

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0015 ◽

1988 ◽

Vol 135 (4) ◽

pp. 85

Author(s):

M.J. Humphreys ◽

K.I. Nuttall

Keyword(s):

Failure Locus

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Sensor applications of thick-film technology

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0014 ◽

1988 ◽

Vol 135 (4) ◽

pp. 77 ◽

Cited By ~ 13

Author(s):

J.E. Brignell ◽

N.M. White ◽

A.W.J. Cranny

Keyword(s):

Thick Film ◽

Sensor Applications ◽

Thick Film Technology

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Goal-oriented subgraph isomorphism technique for IC device recognition

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0025 ◽

1988 ◽

Vol 135 (6) ◽

pp. 141 ◽

Cited By ~ 4

Author(s):

A.D. Brown ◽

P.R. Thomas

Keyword(s):

Subgraph Isomorphism

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Choice of the scattering carrier in Monte Carlo treatments of carrier-carrier scattering

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0021 ◽

1988 ◽

Vol 135 (5) ◽

pp. 119

Author(s):

K. Sadra ◽

C.M. Maziar ◽

B.G. Streetman

Keyword(s):

Monte Carlo ◽

Carrier Scattering

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Simulation of highvoltage power switching transistors under forced gain and inductive load turn-off conditions

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0002 ◽

1988 ◽

Vol 135 (1) ◽

pp. 7 ◽

Cited By ~ 1

Author(s):

D.J. Roulston ◽

J.-B. Quoirin

Keyword(s):

Power Switching ◽

Inductive Load

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Transient analysis of a triangular-barrier bulk unipolar diode

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0019 ◽

1988 ◽

Vol 135 (5) ◽

pp. 107 ◽

Cited By ~ 6

Author(s):

A. McCowen ◽

S.B.H. Shaari ◽

K. Board

Keyword(s):

Transient Analysis

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Optical annealing of ohmic contacts for GaAs high-speed integrated circuits using a zirconium diboride barrier layer

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0012 ◽

1988 ◽

Vol 135 (3) ◽

pp. 67 ◽

Cited By ~ 1

Author(s):

J. Herniman ◽

D.A. Allan ◽

P.J. O'Sullivan

Keyword(s):

Integrated Circuits ◽

Barrier Layer ◽

High Speed ◽

Ohmic Contacts ◽

Zirconium Diboride

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Large-signal field analysis of an O-type travelling wave amplifier. Part 3: Three-dimensional electron motion

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0011 ◽

1988 ◽

Vol 135 (3) ◽

pp. 59 ◽

Cited By ~ 1

Author(s):

N. Kalyanasundaram ◽

R. Chinnadurai

Keyword(s):

Three Dimensional ◽

Travelling Wave ◽

Field Analysis ◽

Electron Motion ◽

Dimensional Electron ◽

Large Signal ◽

Signal Field

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Stabilised high power MOSFET modules

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0027 ◽

1988 ◽

Vol 135 (6) ◽

pp. 155 ◽

Cited By ~ 4

Author(s):

M.J. Lazarus ◽

K.V.O. Rabah ◽

P.M. Ripley

Keyword(s):

High Power ◽

Power Mosfet

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Transit times in the high-density interconnections on GaAs-based VHSIC

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1988.0023 ◽

1988 ◽

Vol 135 (5) ◽

pp. 129 ◽

Cited By ~ 2

Author(s):

A.K. Goel

Keyword(s):

High Density ◽

Transit Times

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IEE Proceedings I Solid State and Electron DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Institution Of Electrical Engineers

Some observations on the failure locus of npn transistors and its improvement using graded collector structures

Sensor applications of thick-film technology

Goal-oriented subgraph isomorphism technique for IC device recognition

Choice of the scattering carrier in Monte Carlo treatments of carrier-carrier scattering

Simulation of highvoltage power switching transistors under forced gain and inductive load turn-off conditions

Transient analysis of a triangular-barrier bulk unipolar diode

Optical annealing of ohmic contacts for GaAs high-speed integrated circuits using a zirconium diboride barrier layer

Large-signal field analysis of an O-type travelling wave amplifier. Part 3: Three-dimensional electron motion

Stabilised high power MOSFET modules

Transit times in the high-density interconnections on GaAs-based VHSIC

IEE Proceedings I Solid State and Electron Devices
Latest Publications