IEE Journal on SolidState and Electron Devices
Latest Publications

TOTAL DOCUMENTS

144

(FIVE YEARS 0)

H-INDEX

13

(FIVE YEARS 0)

Published By Institution Of Electrical Engineers

0308-6968

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Characteristic and near field for a broad SiO2insulated d.h. laser: experiment and theory

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0042 ◽

1979 ◽

Vol 3 (6) ◽

pp. 210 ◽

Cited By ~ 2

Author(s):

J. Buus ◽

K. Stubkjaer

Keyword(s):

Near Field ◽

Laser Experiment

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Nonequilibrium response of m.o.s. devices to a linear voltage ramp in the presence of illumination

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0025 ◽

1979 ◽

Vol 3 (5) ◽

pp. 117 ◽

Cited By ~ 3

Author(s):

P.G.C. Allman ◽

K. Board

Keyword(s):

Voltage Ramp ◽

Linear Voltage

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Current gain variability in normal and I2L bipolar transistors

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0024 ◽

1979 ◽

Vol 3 (4) ◽

pp. 107

Author(s):

A.B. Bhattacharyya ◽

Subodh Jindal ◽

Shankar Subramanian

Keyword(s):

Bipolar Transistors ◽

Current Gain

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Current/voltage characteristics of transistors operating in current-mode second breakdown

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0011 ◽

1979 ◽

Vol 3 (2) ◽

pp. 41 ◽

Cited By ~ 3

Author(s):

J.E. Carroll ◽

P.J. Probert

Keyword(s):

Current Mode ◽

Current Voltage ◽

Current Voltage Characteristics

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Transfer of on states between closely spaced negative-resistance p+-i-n+diodes

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0005 ◽

1979 ◽

Vol 3 (1) ◽

pp. 21

Author(s):

S. Supadech ◽

P. Vachrapibool ◽

Y. Akiba ◽

K. Noda ◽

T. Kurosu ◽

...

Keyword(s):

Negative Resistance

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Topological analysis of stationary behaviour of transferred electron devices with n+-n-n+ structure

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0031 ◽

1979 ◽

Vol 3 (5) ◽

pp. 145

Author(s):

H. Tateno ◽

S. Kataoka ◽

K. Tomizawa

Keyword(s):

Topological Analysis ◽

Electron Devices ◽

Stationary Behaviour

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The determination of interfacial and bulk properties of gold in m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0026 ◽

1979 ◽

Vol 3 (5) ◽

pp. 121 ◽

Cited By ~ 1

Author(s):

L. Faraone ◽

A.G. Nassibian ◽

J.G. Simmons

Keyword(s):

Steady State ◽

Bulk Properties ◽

Voltage Ramp ◽

Linear Voltage

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IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0007 ◽

1979 ◽

Vol 3 (1) ◽

pp. 24

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Deep proton-isolated lasers and proton range data for InP and GaSb

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0001 ◽

1979 ◽

Vol 3 (1) ◽

pp. 1 ◽

Cited By ~ 12

Author(s):

G.D. Henshall ◽

G.H.B. Thompson ◽

J.E.A. Whiteaway ◽

P.R. Selway ◽

M. Broomfield

Keyword(s):

Range Data

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Transients in injection lasers-phase-plane analysis and effects of absorbing sections

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1979.0045 ◽

1979 ◽

Vol 3 (6) ◽

pp. 224

Author(s):

D. Renner ◽

J.E. Carroll

Keyword(s):

Phase Plane ◽

Phase Plane Analysis ◽

Plane Analysis ◽

Injection Lasers

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