The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
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54

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8

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Published By IEEE

9781479911943

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Design and testing of a 1 kW silicon-carbide (SiC) power module

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695563 ◽

2013 ◽

Author(s):

Charles Neft ◽

Emil Hanna ◽

Vivek Mehrotra ◽

Kyle Gould ◽

Avijit Bhunia

Keyword(s):

Silicon Carbide ◽

Power Module ◽

Design And Testing

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Understanding the cascode switching process

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695593 ◽

2013 ◽

Author(s):

P. J. Garsed ◽

R. A. McMahon

Keyword(s):

Switching Process

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Silicon carbide high-temperature packaging module fabrication

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695591 ◽

2013 ◽

Author(s):

Wendell Brokaw ◽

John Elmes ◽

Brian Grummel ◽

Z. John Shen ◽

Thomas X. Wu

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Packaging Module

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Ultrahigh voltage SiC bipolar devices

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695556 ◽

2013 ◽

Author(s):

Kenji Fukuda ◽

Dai Okamoto ◽

Shinsuke Harada ◽

Yasunori Tanaka ◽

Yoshiyuki Yonezawa ◽

...

Keyword(s):

Bipolar Devices

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[Copyright notice]

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695549 ◽

2013 ◽

Keyword(s):

Copyright Notice

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The outlook for SiC vertical JFET technology

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695558 ◽

2013 ◽

Author(s):

Anup Bhalla ◽

Xueqing Li ◽

Petre Alexandrov ◽

J. Christopher Dries

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A specific switching characterization method for evaluation of operating point and temperature impacts on wide bandgap devices

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695573 ◽

2013 ◽

Author(s):

Romain Grezaud ◽

Francois Ayel ◽

Nicolas Rouger ◽

Jean-Christophe Crebier

Keyword(s):

Wide Bandgap ◽

Operating Point ◽

Temperature Impacts

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Hard switching speed improvements in GaN-based synchronous buck converters

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695595 ◽

2013 ◽

Author(s):

Christopher G. Wilson ◽

Luke L. Jenkins ◽

Justin D. Moses ◽

Jeffrey M. Aggas ◽

Robert N. Dean

Keyword(s):

Buck Converters ◽

Switching Speed

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Control of insulated gate interfaces on AlGaN/GaN heterostructures for power devices

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695582 ◽

2013 ◽

Author(s):

Yujin Hori ◽

Taketomo Sato ◽

Tamotsu Hashizume

Keyword(s):

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Performance and robustness of first generation 600-V GaN-on-Si power transistors

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications ◽

10.1109/wipda.2013.6695551 ◽

2013 ◽

Author(s):

Y.-F. Wu ◽

J. Gritters ◽

L. Shen ◽

R.P. Smith ◽

J. McKay ◽

...

Keyword(s):

First Generation ◽

Power Transistors ◽

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