scholarly journals A specific switching characterization method for evaluation of operating point and temperature impacts on wide bandgap devices

Author(s):  
Romain Grezaud ◽  
Francois Ayel ◽  
Nicolas Rouger ◽  
Jean-Christophe Crebier
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.


Author(s):  
M. Strojnik

Magnetic lenses operating in partial saturation offer two advantages in HVEM: they exhibit small cs and cc and their power depends little on the excitation IN. Curve H, Fig. 1, shows that the maximal axial flux density Bz max of one of the lenses investigated changes between points (3) and (4) by 5% as the excitation varies by 40%. Consequently, the designer can relax the requirements concerning the stability of the lens current supplies. Saturated lenses, however, can only be used if (i) unwanted fields along the optical axis can be controlled, (ii) 'wobbling' of the optical axis due to inhomogeneous saturation around the pole piece faces is prevented, (iii) ample ampere-turns can be squeezed into the space available, and (iv) the lens operating point covers a sufficient range of accelerating voltages.


2019 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Saba Gharibzadeh ◽  
Marius Jackoby ◽  
Tobias Abzieher ◽  
Somayeh Moghadamzadeh ◽  
...  

2019 ◽  
Author(s):  
Yuliar Firdaus ◽  
Thomas D. Anthopoulos ◽  
Yuanbao Lin ◽  
Ferry Anggoro Ardy Nugroho ◽  
Emre Yengel ◽  
...  

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