tunnel fet
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2022 ◽  
Author(s):  
J. E. Jeyanthi ◽  
T. S. Arun Samuel ◽  
L. Arivazhagan
Keyword(s):  

Author(s):  
Rajesh Saha ◽  
Rupam Goswami ◽  
Brinda Bhowmick ◽  
Srimanta Baishya

Abstract In this paper, the effect of ferroelectric layer thickness (tFE), coercive field (Ec), remnant polarization (Pr), and saturation polarization (Ps) on transfer characteristic is highlighted for a Ferroelectric Tunnel FET (Fe-TFET) through a commercial TCAD simulator. Further, we have reported the RF/analog parameters like transconductance (gm), output conductance (gd), gain (gm/gd), gate capacitance (Cgg), and cut off frequency (ft) for wide range of FE parameters in Fe-TFET. Improved RF/analog performance and transfer characteristic are obtained for low value of tFE, Pr, Ec, whereas, these behavior is degraded at high value of Ps.


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