2008 IEEE International Integrated Reliability Workshop Final Report
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TOTAL DOCUMENTS

98

(FIVE YEARS 0)

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6

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Published By IEEE

9781424421947, 9781424421954

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

JEDEC Overview

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796109 ◽

2008 ◽

Author(s):

Alvin Strong

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Investigation of GIDL current Injection Disturb Mechanism in two-transistor-eNVM memory devices

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796128 ◽

2008 ◽

Author(s):

Sung-Rae Kim ◽

K. J. Han ◽

Junmin Lee ◽

P. Y. Lee ◽

Tony Zhou ◽

...

Keyword(s):

Current Injection ◽

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Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796085 ◽

2008 ◽

Author(s):

D.P. Ioannou ◽

S. Mittl ◽

G. LaRosa

Keyword(s):

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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Quantitative reliability assessment of Plasma Induced Damage on product wafers with fast WLR measurements

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796138 ◽

2008 ◽

Author(s):

Andreas Martin ◽

Christoph Bukethal ◽

Karl-Henrik Ryden ◽

Sascha Baier ◽

Markus Schwerd

Keyword(s):

Reliability Assessment

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Circuit Failure Prediction for Robust System Design

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796145 ◽

2008 ◽

Author(s):

Subhasish Mitra

Keyword(s):

System Design ◽

Failure Prediction ◽

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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Ageing under illumination of MOS transistors for active pixel sensors (APS) applications

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796127 ◽

2008 ◽

Author(s):

Diana Lopez ◽

Frederic Monsieur ◽

Francis Balestra

Keyword(s):

Mos Transistors ◽

Active Pixel Sensors ◽

Active Pixel ◽

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Coupled Approach for Reliability Study of Fully Self Aligned SiGe: C 250GHz HBTs

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796091 ◽

2008 ◽

Author(s):

Malick Diop ◽

Nathalie Revil ◽

Mathieu Marin ◽

Frederic Monsieur ◽

Thierry Schwartzmann ◽

...

Keyword(s):

Reliability Study

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Reliability for "Future" Devices

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796149 ◽

2008 ◽

Author(s):

Wilfried Haensch

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Copper line topology impact on the reliability of low-k SIOCH for the 45nm technology node and beyond

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796077 ◽

2008 ◽

Author(s):

M. Vilmay ◽

D. Roy ◽

C. Monget ◽

F. Volpi ◽

J-M. Chaix

Keyword(s):

Technology Node ◽

Copper Line ◽

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