2008 IEEE International Integrated Reliability Workshop Final Report
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Published By IEEE

9781424421947, 9781424421954

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796085 ◽

2008 ◽

Cited By ~ 2

Author(s):

D.P. Ioannou ◽

S. Mittl ◽

G. LaRosa

Keyword(s):

Positive Bias ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Quantitative reliability assessment of Plasma Induced Damage on product wafers with fast WLR measurements

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796138 ◽

2008 ◽

Author(s):

Andreas Martin ◽

Christoph Bukethal ◽

Karl-Henrik Ryden ◽

Sascha Baier ◽

Markus Schwerd

Keyword(s):

Reliability Assessment

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Circuit Failure Prediction for Robust System Design

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796145 ◽

2008 ◽

Author(s):

Subhasish Mitra

Keyword(s):

System Design ◽

Failure Prediction ◽

Robust System

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JEDEC Overview

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796109 ◽

2008 ◽

Author(s):

Alvin Strong

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Investigation of GIDL current Injection Disturb Mechanism in two-transistor-eNVM memory devices

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796128 ◽

2008 ◽

Author(s):

Sung-Rae Kim ◽

K. J. Han ◽

Junmin Lee ◽

P. Y. Lee ◽

Tony Zhou ◽

...

Keyword(s):

Current Injection ◽

Memory Devices

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Copper line topology impact on the reliability of low-k SIOCH for the 45nm technology node and beyond

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796077 ◽

2008 ◽

Author(s):

M. Vilmay ◽

D. Roy ◽

C. Monget ◽

F. Volpi ◽

J-M. Chaix

Keyword(s):

Technology Node ◽

Copper Line ◽

Low K

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Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796075 ◽

2008 ◽

Cited By ~ 2

Author(s):

Christelle Benard ◽

Jean-Luc Ogier ◽

Didier Goguenheim

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Total Recovery ◽

Temperature Instability ◽

Bias Temperature Instability

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The Influence Of Complex Geometries and Stress Non-Uniformity On Reliability

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796125 ◽

2008 ◽

Author(s):

A. Aal

Keyword(s):

Complex Geometries

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Discussion Group (DG) summary: NBTI

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796115 ◽

2008 ◽

Author(s):

Tibor Grasser

Keyword(s):

Discussion Group

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2008 IEEE International Integrated Reliability Workshop Final ReportLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

Quantitative reliability assessment of Plasma Induced Damage on product wafers with fast WLR measurements

Circuit Failure Prediction for Robust System Design

JEDEC Overview

Investigation of GIDL current Injection Disturb Mechanism in two-transistor-eNVM memory devices

Copper line topology impact on the reliability of low-k SIOCH for the 45nm technology node and beyond

Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)

The Influence Of Complex Geometries and Stress Non-Uniformity On Reliability

Discussion Group (DG) summary: NBTI

2008 IEEE International Integrated Reliability Workshop Final Report
Latest Publications