Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Reliability indicators for lift-off of bond wires in IGBT power-modules

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888233 ◽

2005 ◽

Cited By ~ 2

Author(s):

B. Farokhzad ◽

P. Turkes ◽

E. Wolfgang ◽

K. Goser

Keyword(s):

Reliability Indicators ◽

Power Modules ◽

Bond Wires ◽

Lift Off

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Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults - a characterization case study using atomic force microscopy

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888215 ◽

2005 ◽

Author(s):

P. Jacob ◽

K. Hoeppner

Keyword(s):

Atomic Force Microscopy ◽

Stacking Faults ◽

Oxide Growth ◽

Oxide Breakdown ◽

Force Microscopy ◽

Atomic Force ◽

Growth Projection

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A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888183 ◽

2005 ◽

Cited By ~ 3

Author(s):

R. Degraeve ◽

Ph. Roussel ◽

J.L. Ogier ◽

G. Groeseneken ◽

H.E. Maes

Keyword(s):

Statistical Model ◽

Field Conditions ◽

Oxide Breakdown

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Pulsed stress reliability investigations of schottky diodes and HBTS

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888243 ◽

2005 ◽

Author(s):

M. Schubler ◽

V. Krozew ◽

K.H. Bock ◽

M. Brandt ◽

L. Vecci ◽

...

Keyword(s):

Schottky Diodes

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Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled technique

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888203 ◽

2005 ◽

Author(s):

Ming-Dou Ker ◽

Chau-Neng Wu

Keyword(s):

High Speed ◽

Esd Protection ◽

Coupled Technique

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Wafer level measurement system for SARF characterization of metal lines

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888230 ◽

2005 ◽

Cited By ~ 1

Author(s):

C. Ciofi ◽

M. De Marinis ◽

B. Neri

Keyword(s):

Measurement System ◽

Wafer Level ◽

Level Measurement

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Validation of yield models with CMOS/SOS test structures

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888226 ◽

2005 ◽

Author(s):

V. Riviere ◽

A. Toubul ◽

S. Ben Amor ◽

G. Gregoris

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Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888187 ◽

2005 ◽

Author(s):

M.M. Lunenborg ◽

H.C. de Graaff ◽

A.J. Mouthaan ◽

J.F. Verweij

Keyword(s):

Physical Modeling ◽

Hot Carrier

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A comparison of focused ion beam and electron beam induced deposition processes

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888214 ◽

2005 ◽

Author(s):

S. Lipp ◽

L. Frey ◽

C. Lehrer ◽

E. Demm ◽

S. Pauthner ◽

...

Keyword(s):

Electron Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Electron Beam Induced Deposition ◽

Deposition Processes

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Study on the reliability of an InP/InGaAsP integrated laser modulator

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ◽

10.1109/esref.1996.888246 ◽

2005 ◽

Author(s):

V. Hornung ◽

F. Le Du ◽

C. Starck ◽

G. Gelly ◽

C. Crusson ◽

...

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Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Reliability indicators for lift-off of bond wires in IGBT power-modules

Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults - a characterization case study using atomic force microscopy

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

Pulsed stress reliability investigations of schottky diodes and HBTS

Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled technique

Wafer level measurement system for SARF characterization of metal lines

Validation of yield models with CMOS/SOS test structures

Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

A comparison of focused ion beam and electron beam induced deposition processes

Study on the reliability of an InP/InGaAsP integrated laser modulator

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Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and AnalysisLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Reliability indicators for lift-off of bond wires in IGBT power-modules

Oxide breakdown decrease by oxide growth projection of implantation-caused stacking faults - a characterization case study using atomic force microscopy

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

Pulsed stress reliability investigations of schottky diodes and HBTS

Efficient output ESD protection for 0.5-μm high-speed CMOS SRAM IC with well-coupled technique

Wafer level measurement system for SARF characterization of metal lines

Validation of yield models with CMOS/SOS test structures

Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation

A comparison of focused ion beam and electron beam induced deposition processes

Study on the reliability of an InP/InGaAsP integrated laser modulator

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Latest Publications