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2015 IEEE International Integrated Reliability Workshop (IIRW)
Latest Publications
TOTAL DOCUMENTS
54
(FIVE YEARS 0)
H-INDEX
4
(FIVE YEARS 0)
Published By IEEE
9781467373951, 9781467373968
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Nanoscopic techniques for studying dielectric breakdown and switching induced morphological changes and defects
2015 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2015.7437097
◽
2015
◽
Author(s):
K.L. Pey
Keyword(s):
Dielectric Breakdown
◽
Morphological Changes
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Field-induced generation of electron traps in the tunnel oxide of flash memory cells
2015 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2015.7437077
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2015
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Cited By ~ 1
Author(s):
Yuri Tkachev
Keyword(s):
Flash Memory
◽
Memory Cells
◽
Electron Traps
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Table of contents
2015 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2015.7437010
◽
2015
◽
Download Full-text
Charge-based stochastic aging analysis of CMOS circuits
2015 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2015.7437084
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2015
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Cited By ~ 2
Author(s):
Theodor Hillebrand
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Nico Hellwege
◽
Nils Heidmann
◽
Steffen Paul
◽
Dagmar Peters-Drolshagen
Keyword(s):
Cmos Circuits
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Solid-State-Drive qualification and reliability strategy
2015 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2015.7437056
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2015
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Cited By ~ 4
Author(s):
Todd A. Marquart
Keyword(s):
Solid State
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Solid State Drive
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Call for papers
2015 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2015.7437053
◽
2015
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Polysilicon resistor degradation - modeling and mechanism
2015 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2015.7437080
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2015
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Cited By ~ 1
Author(s):
Sankaran Jayanarayanan
Keyword(s):
Degradation Modeling
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Comparison between recoverable and permanent NBTI variability components
2015 IEEE International Integrated Reliability Workshop (IIRW)
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10.1109/iirw.2015.7437074
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2015
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Author(s):
D. Nouguier
◽
M. Rafik
◽
X. Federspiel
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D. Nouguier
◽
G. Ghibaudo
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A sampling approach for efficient BEOL TDDB assessment
2015 IEEE International Integrated Reliability Workshop (IIRW)
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10.1109/iirw.2015.7437066
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2015
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Author(s):
Andrew Kim
◽
Cathryn Christiansen
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Baozhen Li
◽
Ernest Wu
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Paul McLaughlin
Keyword(s):
Sampling Approach
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Reliability aging and modeling of chip-package interaction on logic technologies featuring high-k metal gate planar and FinFET transistors
2015 IEEE International Integrated Reliability Workshop (IIRW)
◽
10.1109/iirw.2015.7437068
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2015
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Cited By ~ 1
Author(s):
Jen-Hao Lee
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Eliot S.H. Chen
◽
Yung-Huei Lee
◽
Chun-Hung Lin
◽
Chun-Yu Wu
◽
...
Keyword(s):
Metal Gate
◽
High K
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