The Physics of MOS Insulators
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Published By Elsevier

9780080259697
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MOS WEAROUT AND BREAKDOWN STATISTICS

1980 ◽  
pp. 349-352 ◽  
Author(s):  
D. Wolters ◽  
T. Hoogestyn ◽  
H. Kraaij

SURFACE-POTENTIAL DEPENDENCE OF EPR CENTERS AT THE Si/SiO2 INTERFACE

1980 ◽  
pp. 326-330 ◽  
Author(s):  
E.H. Poindexter ◽  
P.J. Caplan ◽  
J.J. Finnegan ◽  
N.M. Johnson ◽  
D.K. Biegelsen ◽  
...  
Keyword(s):  
Surface Potential ◽  
Potential Dependence

EPR DEFECTS AND INTERFACE STATES ON OXIDIZED (111) AND (100) SILICON

1980 ◽  
pp. 306-310 ◽  
Author(s):  
P.J. Caplan ◽  
E.H. Poindexter ◽  
B.E. Deal ◽  
R.R. Razouk
Keyword(s):  
Interface States

GERMANIUM (OXY)NITRIDE BASED SURFACE PASSIVATION TECHNIQUE AS APPLIED TO GaAs & InP

1980 ◽  
pp. 207-211 ◽  
Author(s):  
B. Bayraktaroglu ◽  
R.L. Johnson ◽  
D.W. Langer ◽  
M.G. Mier
Keyword(s):  
Surface Passivation

PHOTOIONIZATION CROSS SECTION OF THE 2.5 eV ELECTRON TRAP IN SiO2

1980 ◽  
pp. 142-146 ◽  
Author(s):  
D.D. Rathman ◽  
F.J. Feigl ◽  
S.R. Butler ◽  
W.B. Fowler
Keyword(s):  
Cross Section ◽  
Photoionization Cross Section ◽  
Electron Trap
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