Evolution of the Internal Structure of Short-Period Cr/V Multilayers with Different Vanadium Layers Thicknesses

Cr/V multilayer mirrors are suitable for applications in the “water window” spectral ranges. To study factors influencing the internal microstructure of Cr/V multilayers, multilayers with different vanadium layers thicknesses varying from 0.6 nm to 4.0 nm, and a fixed thickness (1.3 nm) of chromium layers, were fabricated and characterized with a set of experimental techniques. The average interface width characterizing a cumulative effect of different structure irregularities was demonstrated to exhibit non-monotonous dependence on the V layer thickness and achieve a minimal value of 0.31 nm when the thickness of the V layers was 1.2 nm. The discontinuous growth of very thin V films increased in roughness as the thickness of V layers decreased. The columnar growth of the polycrystalline grains in both materials became more pronounced with increasing thickness, resulting in a continuous increase in the interface width to a maximum of 0.9 nm for a 4 nm thickness of the V layer.

Development of an Anti-Trapping Current for Phase Field Models Using Arbitrary CALPHAD Thermodynamics

Unless corrected by so called anti-trapping currents, phase field models of solidification display a dependence upon the diffuse interface width, δ, used in the simulation. This is most commonly manifest as a reduction in solute partitioning, which is both growth velocity and interface width dependent, resulting in a serious impediment to quantitative simulation. However, such anti-trapping currents are often restricted to very simple materials thermodynamics, appropriate only to dilute ideal solutions. Here we propose a form of the anti-trapping current which can be implemented for arbitrary thermodynamics, including both Redlich-Kister solution phases and sub-lattice models for intermetallic growth. The effect of the new anti-trapping current is illustrated with respect to Pb dendrites growing from a Pb-Sn melt containing either 25% or 30% Sn. The new anti-trapping current is shown to render the solutions independent of the diffuse interface width both with regard to solute partitioning and other growth metrics such as solidification velocity and dendrite tip radius.