2008 IEEE Compound Semiconductor Integrated Circuits Symposium
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781424419395

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Measuring IC Layout Effects on Quality and Reliability

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.16 ◽

2008 ◽

Cited By ~ 1

Author(s):

William J. Roesch ◽

Dorothy June M. Hamada

Keyword(s):

Quality And Reliability

Improved Drain-Source Current Model for HEMT's with Accurate Gm Fitting in All Regions

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.27 ◽

2008 ◽

Cited By ~ 4

Author(s):

Lin-Sheng Liu ◽

Jian-Guo Ma

Keyword(s):

Current Model ◽

Source Current ◽

Fitting In

RF Power Amplifier IC with Low Memory Effect, Reduced Low Frequency Gain Peak and Isolated Temperature Tracking Circuitry

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.20 ◽

2008 ◽

Cited By ~ 2

Author(s):

Reza Bagger ◽

Håkan Olsson

Keyword(s):

Memory Effect ◽

Power Amplifier ◽

Low Frequency ◽

Rf Power ◽

Rf Power Amplifier ◽

Temperature Tracking ◽

Gain Peak

A 94GHz SPST Switch in 65nm Bulk CMOS

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.34 ◽

2008 ◽

Cited By ~ 21

Author(s):

Alexander Tomkins ◽

Patrice Garcia ◽

Sorin P. Voinigescu

X-Band Microstrip AlGaN/GaN HEMT Power MMICs

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.40 ◽

2008 ◽

Author(s):

Chen Chen ◽

Tangsheng Chen ◽

Bin Zhang ◽

Chunjiang Ren ◽

Gang Jiao ◽

...

Keyword(s):

Gan Hemt ◽

X Band

GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.7 ◽

2008 ◽

Cited By ~ 25

Author(s):

M. Micovic ◽

A. Kurdoghlian ◽

H. P. Moyer ◽

P. Hashimoto ◽

M. Hu ◽

...

A Metamorphic 220-320 GHz HEMT Amplifier MMIC

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.12 ◽

2008 ◽

Cited By ~ 12

Author(s):

A. Tessmann ◽

A. Leuther ◽

H. Massler ◽

M. Kuri ◽

R. Loesch

AlGaN/GaN MOS-HEMT with Stack Gate HfO2/Al2O3 Structure Grown by Atomic Layer Deposition

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.59 ◽

2008 ◽

Cited By ~ 4

Author(s):

Yuan-Zheng Yue ◽

Yue Hao ◽

Jin-Cheng Zhang

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition

A V-Band Fully-Integrated CMOS Distributed Active Transformer Power Amplifier for 802.15.TG3c Wireless Personal Area Network Applications

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.31 ◽

2008 ◽

Cited By ~ 5

Author(s):

Yung-Nien Jen ◽

Jeng-Han Tsai ◽

Tian-Wei Huang ◽

Huei Wang

Keyword(s):

Power Amplifier ◽

Area Network ◽

Fully Integrated ◽

Network Applications ◽

Wireless Personal Area Network ◽

V Band ◽

Transformer Power ◽

Personal Area Network

A 90-Gb/s 2:1 Multiplexer with 1-Tap FFE in SiGe Technology

2008 IEEE Compound Semiconductor Integrated Circuits Symposium ◽

10.1109/csics.2008.37 ◽

2008 ◽

Cited By ~ 3

Author(s):

Ekaterina Laskin ◽

Alexander Rylyakov

2008 IEEE Compound Semiconductor Integrated Circuits SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Measuring IC Layout Effects on Quality and Reliability

Improved Drain-Source Current Model for HEMT's with Accurate Gm Fitting in All Regions

RF Power Amplifier IC with Low Memory Effect, Reduced Low Frequency Gain Peak and Isolated Temperature Tracking Circuitry

A 94GHz SPST Switch in 65nm Bulk CMOS

X-Band Microstrip AlGaN/GaN HEMT Power MMICs

GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio

A Metamorphic 220-320 GHz HEMT Amplifier MMIC

AlGaN/GaN MOS-HEMT with Stack Gate HfO2/Al2O3 Structure Grown by Atomic Layer Deposition

A V-Band Fully-Integrated CMOS Distributed Active Transformer Power Amplifier for 802.15.TG3c Wireless Personal Area Network Applications

A 90-Gb/s 2:1 Multiplexer with 1-Tap FFE in SiGe Technology

2008 IEEE Compound Semiconductor Integrated Circuits Symposium
Latest Publications