International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

Quantum corrected Boltzmann transport model for tunneling effects

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233691 ◽

2003 ◽

Author(s):

Bo Wu ◽

Ting-wei Tang

Keyword(s):

Transport Model ◽

Boltzmann Transport

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Photoresist flow simulation using the viscous flow model

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233633 ◽

2003 ◽

Cited By ~ 1

Author(s):

Won-young Chung ◽

Tai-kyung Kim ◽

Young-tae Kim ◽

Byung-joon Hwang ◽

Young-kwan Park ◽

...

Keyword(s):

Viscous Flow ◽

Flow Model ◽

Flow Simulation

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Electrostatic analysis of carbon nanotube arrays

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233662 ◽

2003 ◽

Cited By ~ 11

Author(s):

Xinlin Wang ◽

H.S.P. Wong ◽

P. Oldiges ◽

R.J. Miller

Keyword(s):

Carbon Nanotube ◽

Nanotube Arrays ◽

Carbon Nanotube Arrays

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Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233661 ◽

2003 ◽

Cited By ~ 5

Author(s):

S. Chakravarthi ◽

P. Kohli ◽

P.R. Chidambaram ◽

H. Bu ◽

A. Jain ◽

...

Keyword(s):

Shallow Junctions ◽

Ultra Shallow Junctions

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Optimization of sub-50 nm MOSFETs to mitigate drive current degradation due to silicon recess in S/D

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233668 ◽

2003 ◽

Author(s):

Y. Shiho ◽

B. Winstead ◽

M. Foisy ◽

M. Orlowski

Keyword(s):

Drive Current

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A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233681 ◽

2003 ◽

Cited By ~ 2

Author(s):

M. Hane ◽

Y. Kawakami ◽

H. Nakamura ◽

T. Yamada ◽

K. Kumagai ◽

...

Keyword(s):

Nuclear Reactions ◽

Device Simulation ◽

Simulation Based

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Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233672 ◽

2003 ◽

Author(s):

Q. Ouyang ◽

S.J. Koester ◽

J.O. Chu ◽

K.L. Saenger ◽

J.A. Ott ◽

...

Keyword(s):

Strained Si ◽

Rf Performance ◽

Gate Design

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Optimization of L/sub Gate/ for ggNMOS ESD protection devices fabricated on bulk- and SOI- substrates, using process and device simulation

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233684 ◽

2003 ◽

Cited By ~ 1

Author(s):

A.I. Deckelmann ◽

G. Wachutka

Keyword(s):

Device Simulation ◽

Esd Protection ◽

Protection Devices ◽

Soi Substrates

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Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233660 ◽

2003 ◽

Author(s):

J. Bonnouvrier ◽

D. Lenoble ◽

E. Robilliart ◽

T. Schwartzmann ◽

H. Jaouen

Keyword(s):

Surface Engineering ◽

Cmos Technology ◽

Shallow Junction ◽

Technology Node ◽

Junction Formation

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CLIMATE (chip-level intertwined metal and active temperature estimator)

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233628 ◽

2003 ◽

Cited By ~ 2

Author(s):

A. Labun ◽

T. Reeve

Keyword(s):

Active Temperature

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International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Quantum corrected Boltzmann transport model for tunneling effects

Photoresist flow simulation using the viscous flow model

Electrostatic analysis of carbon nanotube arrays

Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions

Optimization of sub-50 nm MOSFETs to mitigate drive current degradation due to silicon recess in S/D

A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions

Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs

Optimization of L/sub Gate/ for ggNMOS ESD protection devices fabricated on bulk- and SOI- substrates, using process and device simulation

Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond

CLIMATE (chip-level intertwined metal and active temperature estimator)

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International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Quantum corrected Boltzmann transport model for tunneling effects

Photoresist flow simulation using the viscous flow model

Electrostatic analysis of carbon nanotube arrays

Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions

Optimization of sub-50 nm MOSFETs to mitigate drive current degradation due to silicon recess in S/D

A new comprehensive SRAM soft-effor simulation based on 3D device simulation incorporating neutron nuclear reactions

Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs

Optimization of L/sub Gate/ for ggNMOS ESD protection devices fabricated on bulk- and SOI- substrates, using process and device simulation

Simulation of surface engineering for ultra shallow junction formation of PMOS for the 90nm CMOS technology node and beyond

CLIMATE (chip-level intertwined metal and active temperature estimator)

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.
Latest Publications