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2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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TOTAL DOCUMENTS
49
(FIVE YEARS 0)
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5
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Published By IEEE
9781479912513, 9781479912506
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
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Temperature sensitivity modeling of pn-junction diodes for microbolometer-based thermal imaging applications
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656299
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2013
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Cited By ~ 2
Author(s):
Fabian Utermohlen
◽
Ingo Herrmann
◽
Daniel B. Etter
◽
Shen Hue Sun
◽
Joachim Burghartz
Keyword(s):
Temperature Sensitivity
◽
Thermal Imaging
◽
Pn Junction
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Resistive switching in thermally oxidized titanium films
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656318
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2013
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Cited By ~ 1
Author(s):
Daniel Blaschke
◽
Peter Zahn
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Ilona Skorupa
◽
Bernd Scheumann
◽
Andrea Scholz
◽
...
Keyword(s):
Resistive Switching
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Model of mutual coupling between two bonding wires on glass substrate
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656302
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2013
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Cited By ~ 2
Author(s):
Thanh Vinh Dinh
◽
Daniel Pasquet
◽
Philippe Descamps
◽
Dominique Lesenechal
◽
Julien Pagazani
◽
...
Keyword(s):
Glass Substrate
◽
Mutual Coupling
◽
Bonding Wires
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Conference scope
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
◽
10.1109/iscdg.2013.6656286
◽
2013
◽
Download Full-text
Sensitivity of class-E power amplifier performance to individual transistor model parameters
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656300
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2013
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Author(s):
J. Krause
◽
H. Wittkopf
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M. Schroter
◽
S. Sinha
◽
M. Weststrate
Keyword(s):
Power Amplifier
◽
Model Parameters
◽
Transistor Model
◽
Class E
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An Energy Harvester concept for electrostatic conversion manufactured in MEMS surface micromachining technology
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656310
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2013
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Cited By ~ 2
Author(s):
Jacopo Iannacci
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Guido Sordo
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Massimo Gottardi
◽
Thomas Kuenzig
◽
Gabriele Schrag
◽
...
Keyword(s):
Energy Harvester
◽
Surface Micromachining
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An efficiency-enhanced asynchronous buck converter with threshold compensated freewheeling diode
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656293
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2013
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Author(s):
Hongcheng Xu
◽
Sara Pashmineh
◽
Yi Zhang
◽
Dirk Killat
◽
Maurits Ortmanns
Keyword(s):
Buck Converter
Download Full-text
1.2-V 101-GHz W-band power amplifier integrated in a 65-nm CMOS technology
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656291
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2013
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Cited By ~ 2
Author(s):
Uroschanit Yodprasit
◽
Kosuke Katayama
◽
Ryuichi Fujimoto
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Mizuki Motoyoshi
◽
Minoru Fujishima
Keyword(s):
Power Amplifier
◽
Cmos Technology
◽
Band Power
◽
W Band
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Finite element analysis for BEOL stress engineering to improve yield and reliability of sub-30 nm structures
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656314
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2013
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Author(s):
Eberhard Kaulfersch
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Birgit Bramer
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Sven Rzepka
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Dirk Breuer
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Ellen Clauss
◽
...
Keyword(s):
Finite Element Analysis
◽
Finite Element
◽
Element Analysis
◽
Stress Engineering
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FinFET-based pseudo-spin-transistor: Design and performance
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
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10.1109/iscdg.2013.6656305
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2013
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Cited By ~ 2
Author(s):
Yusuke Shuto
◽
Shuu'ichirou Yamamoto
◽
Satoshi Sugahara
Keyword(s):
Spin Transistor
◽
And Performance
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