2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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116

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Published By IEEE

9781467357364, 9781467357333

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A new time-dependent analytic compact model for radiation-induced photocurrent in epitaxial structures

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650616 ◽

2013 ◽

Author(s):

Jason C. Verley ◽

Eric R. Keiter ◽

Charles E. Hembree ◽

Carl L. Axness ◽

Bert Kerr

Keyword(s):

Time Dependent ◽

Compact Model ◽

Radiation Induced ◽

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A physics-based statistical model for reliability of STT-MRAM considering oxide variability

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650566 ◽

2013 ◽

Author(s):

Chih-Hsiang Ho ◽

Georgios D. Panagopoulos ◽

Soo Youn Kim ◽

Yusung Kim ◽

Dongsoo Lee ◽

...

Keyword(s):

Statistical Model

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Strain effects on transport properties of Si nanowire devices

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650581 ◽

2013 ◽

Author(s):

Viet-Hung Nguyen ◽

Francois Triozon ◽

Yann-Michel Niquet

Keyword(s):

Transport Properties ◽

Strain Effects ◽

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Spherical harmonics solver for coupled hot-electron — Hot-phonon system

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650649 ◽

2013 ◽

Author(s):

Mindaugas Ramonas ◽

Christoph Jungemann

Keyword(s):

Spherical Harmonics ◽

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Compact modeling of SOI MOSFETs with ultra thin silicon and BOX layers for ultra low power applications

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650630 ◽

2013 ◽

Author(s):

Y. Fukunaga ◽

M. Miura-Mattausch ◽

U. Feldmann ◽

H. Kikuchiharasa ◽

M. Miyake ◽

...

Keyword(s):

Low Power ◽

Compact Modeling ◽

Ultra Low Power ◽

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An accurate compact modelling approach for statistical ageing and reliability

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650573 ◽

2013 ◽

Author(s):

Jie Ding ◽

Dave Reid ◽

Campbell Millar ◽

Asen Asenov

Keyword(s):

Modelling Approach

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3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650560 ◽

2013 ◽

Author(s):

Salvatore Maria Amoroso ◽

Louis Gerrer ◽

Asen Asenov

Keyword(s):

Statistical Analysis ◽

Nanoscale Mosfets

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Analysis of the latch-up process and current filamentation in high-voltage trench-IGBT cell arrays

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650633 ◽

2013 ◽

Author(s):

C. Toechterle ◽

F. Pfirsch ◽

C. Sandow ◽

G. Wachutka

Keyword(s):

High Voltage ◽

Cell Arrays ◽

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Evaluation of spin lifetime in strained UT2B silicon-on-insulator MOSFETs

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650618 ◽

2013 ◽

Author(s):

Dmitri Osintsev ◽

Viktor Sverdlov ◽

Siegfried Selberherr

Keyword(s):

Silicon On Insulator ◽

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Compact modeling for application-specific high-sigma worst case

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2013.6650574 ◽

2013 ◽

Author(s):

Hsuan-Han Wang ◽

Yi-Ling Chen ◽

Chang-Chieh Yang ◽

Chung-Kai Lin ◽

Min-Chie Jeng

Keyword(s):

Compact Modeling ◽

Application Specific

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