The Physics of Submicron Semiconductor Devices - NATO ASI Series
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Published By Springer US

9781489923844, 9781489923820

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Insulator/Semiconductor Interfaces

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_5 ◽

1988 ◽

pp. 195-221

Author(s):

Carl W. Wilmsen

Keyword(s):

Semiconductor Interfaces

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Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_12 ◽

1988 ◽

pp. 401-443

Author(s):

B. D. McCombe

Keyword(s):

Quantum Effects ◽

One Dimension ◽

Device Structures

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Physics of Heterostructures and Heterostructure Devices

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_13 ◽

1988 ◽

pp. 445-475

Author(s):

Peter J. Price

Keyword(s):

Heterostructure Devices

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Metal-Semiconductor Interfaces

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_23 ◽

1988 ◽

pp. 683-701 ◽

Cited By ~ 1

Author(s):

R. H. Williams

Keyword(s):

Semiconductor Interfaces

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Two Dimensional Electron Gas Fet

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_20 ◽

1988 ◽

pp. 629-643

Author(s):

Nuyen T. Linh

Keyword(s):

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_17 ◽

1988 ◽

pp. 577-589

Author(s):

S. J. Allen

Keyword(s):

Semiconductor Devices ◽

Far Infrared ◽

Hot Electron ◽

Electron Dynamics ◽

Velocity Overshoot ◽

Infrared Measurements

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Picosecond Measurements of Device and Circuit Transient Response with Optoelectric Techniques

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_25 ◽

1988 ◽

pp. 713-728

Author(s):

Robert B. Hammond

Keyword(s):

Transient Response

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The Influence of Contacts on the Behavior of Near and Sub-Micron InP Devices

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_18 ◽

1988 ◽

pp. 591-606

Author(s):

Peter A. Blakey ◽

Jack East ◽

Melvin P. Shaw

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Submicron Lithography

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_11 ◽

1988 ◽

pp. 373-400 ◽

Cited By ~ 2

Author(s):

C. D. W. Wilkinson ◽

S. P. Beaumont

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Boltzmann Transport Equation

The Physics of Submicron Semiconductor Devices - NATO ASI Series ◽

10.1007/978-1-4899-2382-0_2 ◽

1988 ◽

pp. 33-43 ◽

Cited By ~ 1

Author(s):

Karl Hess

Keyword(s):

Transport Equation ◽

Boltzmann Transport Equation ◽

Boltzmann Transport

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The Physics of Submicron Semiconductor Devices - NATO ASI SeriesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer US

Insulator/Semiconductor Interfaces

Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension

Physics of Heterostructures and Heterostructure Devices

Metal-Semiconductor Interfaces

Two Dimensional Electron Gas Fet

Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices

Picosecond Measurements of Device and Circuit Transient Response with Optoelectric Techniques

The Influence of Contacts on the Behavior of Near and Sub-Micron InP Devices

Submicron Lithography

Boltzmann Transport Equation

The Physics of Submicron Semiconductor Devices - NATO ASI Series
Latest Publications