2004 IEEE International Reliability Physics Symposium. Proceedings
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Degradation of ultra-thin oxides with tungsten gates under high voltage: wear-out and breakdown transient

2004 ◽  
Author(s):  
F. Palumbo ◽  
S. Lombardo ◽  
J.H. Stathis ◽  
V. Narayanan ◽  
F.R. McFeely ◽  
...  
Keyword(s):  
High Voltage

Chip-level ESD simulation for fail detection and design guidance

2004 ◽  
Author(s):  
S. Druen ◽  
M. Streibl ◽  
F. Zangl ◽  
J. Schneider ◽  
U. Glaser ◽  
...  
Keyword(s):  
Design Guidance

scholarly journals A chip and pixel qualification methodology on imaging sensors

2004 ◽  
Author(s):  
Yuan Chen ◽  
S.M. Guertin ◽  
M. Petkov ◽  
D.N. Nguyen ◽  
F. Novak
Keyword(s):  
Imaging Sensors

A new breakdown failure mechanism in HfO/sub 2/ gate dielectric

2004 ◽  
Author(s):  
R. Ranjan ◽  
K.L. Pey ◽  
L.J. Tang ◽  
C.H. Tung ◽  
G. Groeseneken ◽  
...  
Keyword(s):  
Failure Mechanism ◽  
Gate Dielectric

Void and extrusion induced failure of submicron multilevel interconnects

2004 ◽  
Author(s):  
Yong-Bum Jo ◽  
Jongwoo Park ◽  
Chul-Hee Jeon ◽  
Kyung-Il Ouh ◽  
Hyun-Goo Jeon

Detection of tin plating and tin whisker mitigation

2004 ◽  
Author(s):  
W.D. Bjorndahl ◽  
L. Singleton ◽  
R. Griese ◽  
F. Chong
Keyword(s):  
Tin Whisker ◽  
Tin Plating ◽  
Tin Whisker Mitigation
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