2021 IEEE International Memory Workshop (IMW)
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41
(FIVE YEARS 41)

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0
(FIVE YEARS 0)

Published By IEEE

9781728185170
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Design of Non-volatile Capacitive Crossbar Array for In-Memory Computing

2021 ◽  
Author(s):  
Yuan-Chun Luo ◽  
Anni Lu ◽  
Jae Hur ◽  
Shaolan Li ◽  
Shimeng Yu
Keyword(s):  
Crossbar Array

Simulated Annealing Algorithm & ReRAM Device Co-optimization for Computation-in-Memory

2021 ◽  
Author(s):  
Kenta Taoka ◽  
Naoko Misawa ◽  
Shunsuke Koshino ◽  
Chihiro Matsui ◽  
Ken Takeuchi
Keyword(s):  
Simulated Annealing ◽  
Simulated Annealing Algorithm ◽  
Annealing Algorithm

scholarly journals A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

2021 ◽  
Author(s):  
L. Begon-Lours ◽  
M. Halter ◽  
D. Davila Pineda ◽  
V. Bragaglia ◽  
Y. Popoff ◽  
...  
Keyword(s):  
Non Volatile Memory ◽  
Volatile Memory

Optimization of Switching Metrics for CMOS Integrated HfO2 based RRAM Devices on 300 mm Wafer Platform

2021 ◽  
Author(s):  
Jubin Hazra ◽  
Maximilian Liehr ◽  
Karsten Beckmann ◽  
Minhaz Abedin ◽  
Sarah Rafq ◽  
...  

Bringing in Cryogenics to Storage: Characteristics and Performance Improvement of 3D Flash Memory

2021 ◽  
Author(s):  
Yuta Aiba ◽  
Hitomi Tanaka ◽  
Takashi Maeda ◽  
Keiichi Sawa ◽  
Fumie Kikushima ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Flash Memory ◽  
And Performance ◽  
Storage Characteristics

Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed

2021 ◽  
Author(s):  
Hitoshi. Saito ◽  
J. Watanabe ◽  
J. Seino ◽  
T. Tamura ◽  
N. Sashida ◽  
...  
Keyword(s):  
High Reliability ◽  
Small Cell ◽  
Cell Area ◽  
Switching Speed ◽  
High Switching Speed
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