Gate Dielectric Integrity: Material, Process, and Tool Qualification
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Published By ASTM International

9780803126152
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Single-Wafer Gate Dielectric Technologies for Sub-0.18 μm Applications

2008 ◽  
pp. 122-122-10
Author(s):  
G Miner ◽  
G Xing ◽  
Y Yokota ◽  
A Jaggi ◽  
E Sanchez ◽  
...  
Keyword(s):  
Gate Dielectric

Application of Quantox Measurements to Identify Phosphorus Contamination in Silicon Wafers

2008 ◽  
pp. 91-91-11
Author(s):  
MA Dexter ◽  
KM Hasslinger ◽  
JR Fritz ◽  
CA Ullo
Keyword(s):  
Silicon Wafers ◽  
Phosphorus Contamination

COCOS (Corona Oxide Characterization of Semiconductor) Metrology: Physical Principles and Applications

2008 ◽  
pp. 74-74-17 ◽  
Author(s):  
M Wilson ◽  
J Lagowski ◽  
A Savtchouk ◽  
L Jastrzebski ◽  
J D'Amico
Keyword(s):  
Physical Principles

Silicon Substrate Related Gate Oxide Integrity at Different Oxide Thicknesses

2008 ◽  
pp. 112-112-10
Author(s):  
ED Grann ◽  
A Huber ◽  
J Grabmeier ◽  
R Hölzl ◽  
R Wahlich
Keyword(s):  
Silicon Substrate ◽  
Gate Oxide ◽  
Gate Oxide Integrity

Voltage Step Stress for 10 nm Oxides

2008 ◽  
pp. 41-41-6
Author(s):  
A Strong
Keyword(s):  
Voltage Step

Localized Charging Damage in Thin Oxides

2008 ◽  
pp. 47-47-15
Author(s):  
G Bersuker ◽  
J Werking
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