Gate Dielectric Integrity: Material, Process, and Tool Qualification
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13

(FIVE YEARS 0)

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1

(FIVE YEARS 0)

Published By ASTM International

9780803126152

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Single-Wafer Gate Dielectric Technologies for Sub-0.18 μm Applications

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13489s ◽

2008 ◽

pp. 122-122-10

Author(s):

G Miner ◽

G Xing ◽

Y Yokota ◽

A Jaggi ◽

E Sanchez ◽

...

Keyword(s):

Gate Dielectric

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Application of Quantox Measurements to Identify Phosphorus Contamination in Silicon Wafers

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13486s ◽

2008 ◽

pp. 91-91-11

Author(s):

MA Dexter ◽

KM Hasslinger ◽

JR Fritz ◽

CA Ullo

Keyword(s):

Silicon Wafers ◽

Phosphorus Contamination

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COCOS (Corona Oxide Characterization of Semiconductor) Metrology: Physical Principles and Applications

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13485s ◽

2008 ◽

pp. 74-74-17 ◽

Author(s):

M Wilson ◽

J Lagowski ◽

A Savtchouk ◽

L Jastrzebski ◽

J D'Amico

Keyword(s):

Physical Principles

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Characterization of Gate Dielectrics with Mercury Gate MOS Current-Voltage Measurements

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13484s ◽

2008 ◽

pp. 65-65-9

Author(s):

GA Gruber ◽

RJ Hillard

Keyword(s):

Gate Dielectrics ◽

Current Voltage

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Ultra-Thin Film Dielectric Reliability Characterization

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13481s ◽

2008 ◽

pp. 27-27-14

Author(s):

JS Suehle

Keyword(s):

Thin Film ◽

Film Dielectric ◽

Ultra Thin Film

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Silicon Substrate Related Gate Oxide Integrity at Different Oxide Thicknesses

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13488s ◽

2008 ◽

pp. 112-112-10

Author(s):

ED Grann ◽

A Huber ◽

J Grabmeier ◽

R Hölzl ◽

R Wahlich

Keyword(s):

Silicon Substrate ◽

Gate Oxide Integrity

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Voltage Step Stress for 10 nm Oxides

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13482s ◽

2008 ◽

pp. 41-41-6

Author(s):

A Strong

Keyword(s):

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Gate Oxide Reliability Assessment and Some Connections to Oxide Integrity

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13480s ◽

2008 ◽

pp. 3-3-21

Author(s):

DJ Dumin

Keyword(s):

Reliability Assessment ◽

Oxide Reliability

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Application of Gate Oxide Integrity Measurements in Silicon Wafer Manufacturing

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13487s ◽

2008 ◽

pp. 102-102-10 ◽

Author(s):

MR Seacrist

Keyword(s):

Silicon Wafer ◽

Wafer Manufacturing ◽

Gate Oxide Integrity

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Localized Charging Damage in Thin Oxides

Gate Dielectric Integrity: Material, Process, and Tool Qualification ◽

10.1520/stp13483s ◽

2008 ◽

pp. 47-47-15

Author(s):

G Bersuker ◽

J Werking

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