2010 International Conference on Simulation of Semiconductor Processes and Devices
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105

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9781424477012

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Si nanowire device and its modeling

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604569 ◽

2010 ◽

Author(s):

Hiroshi Iwai ◽

Kenji Natori ◽

Kuniyuki Kakushima ◽

Parhat Ahmet ◽

Atsushi Oshiyama ◽

...

Keyword(s):

Si Nanowire ◽

Nanowire Device

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Session 04-A invited

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604572 ◽

2010 ◽

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Investigation of charge loss mechanisms in planar and raised STI charge trapping flash memories

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604520 ◽

2010 ◽

Author(s):

Zhiliang Xia ◽

Dae Sin Kim ◽

Ju-Yul Lee ◽

Keun-Ho Lee ◽

Young-Kwan Park ◽

...

Keyword(s):

Charge Trapping ◽

Flash Memories ◽

Charge Loss ◽

Loss Mechanisms

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Compact process model of temperature dependent amorphization induced by ion implantation

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604529 ◽

2010 ◽

Author(s):

Alexander Schmidt ◽

Inkook Jang ◽

Taikyung Kim ◽

Keun-Ho Lee ◽

Young-Kwan Park ◽

...

Keyword(s):

Ion Implantation ◽

Process Model ◽

Temperature Dependent

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Foreword

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604595 ◽

2010 ◽

Author(s):

Giorgio Baccarani ◽

Massimo Rudan

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Session 11-B process: Ion implantation

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604531 ◽

2010 ◽

Keyword(s):

Ion Implantation

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Steep-slope nanowire field-effect transistor (SS-NWFET)

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604567 ◽

2010 ◽

Author(s):

Elena Gnani ◽

Antonio Gnudi ◽

Susanna Reggiani ◽

Giorgio Baccarani

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Steep Slope ◽

Effect Transistor

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Fabry-Perot oscillations in the thermopower of ballistic graphene ribbons

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604579 ◽

2010 ◽

Author(s):

George S. Kliros ◽

Paraskevi C. Divari

Keyword(s):

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Schrödinger-Poisson and Monte Carlo analysis of III–V MOSFETs for high frequency and low consumption applications

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604563 ◽

2010 ◽

Author(s):

Ming Shi ◽

Jerome Saint-Martin ◽

Arnaud Bournel ◽

Philippe Dollfus

Keyword(s):

Monte Carlo ◽

High Frequency ◽

Monte Carlo Analysis ◽

Low Consumption

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Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices

2010 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2010.5604547 ◽

2010 ◽

Author(s):

Sung-Min Hong ◽

Christoph Jungemann

Keyword(s):

Boltzmann Equation ◽

Semiconductor Devices ◽

Pauli Principle

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