2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

2006 ◽

Author(s):

B.G. Yan ◽

J.F. Kang ◽

N. Sa ◽

X.Y. Liu ◽

G. Du ◽

...

Keyword(s):

Gate Dielectric

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An investigation of the effects of Si thickness-induced variation of the electrical characteristics in FDSOI with block oxide

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306077 ◽

2006 ◽

Cited By ~ 1

Author(s):

Yi-Chuen Eng ◽

Jyi-tsong Lin ◽

Kuo-dong Huang ◽

Tai-yi Lee ◽

Kao-cheng Lin

Keyword(s):

Electrical Characteristics ◽

Induced Variation

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Towards Unification of MOS Compact Models with the Unified Regional Approach

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306073 ◽

2006 ◽

Cited By ~ 4

Author(s):

Subhash Rustagi ◽

Liang-Choo Hsia ◽

Sanford Chu ◽

M. Cheng ◽

Siau Ben Chiah ◽

...

Keyword(s):

Regional Approach ◽

Compact Models

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Effects of Homo-buffer Layer on Properties of ZnO Films Grown on Si(1 1 1) by Pulsed Laser Deposition

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306555 ◽

2006 ◽

Author(s):

Jie Zhao ◽

Li-Zhong Hu ◽

Zhao-Yang Wang ◽

Jian-Ming Chen ◽

Guang-Min Wu ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Buffer Layer ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Films

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Models of Source/Drain Bias on Negative Bias Temperature Instability

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306699 ◽

2006 ◽

Cited By ~ 3

Author(s):

Z.H. Gan ◽

C.C. Liao ◽

M.. Liao ◽

J.P. Wang ◽

W. Wong ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Drain Bias

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Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306557 ◽

2006 ◽

Author(s):

Z.J. Qiu ◽

R. Liu ◽

S.L. Zhang ◽

Y.S. Gui ◽

L.J. Cui ◽

...

Keyword(s):

Electrical Properties ◽

Gaas Substrate

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The effects of incorporating nitrogen into silicon dioxide on gate leakage current in MOSFETs

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306066 ◽

2006 ◽

Author(s):

L.f. Mao ◽

Z.O. Wang ◽

J.Y. Wang

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage

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Lumped behavioral modeling for suspended MEMS

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306435 ◽

2006 ◽

Cited By ~ 1

Author(s):

Shan Guangbao ◽

Hailong WeiH ◽

Liu Youbao

Keyword(s):

Behavioral Modeling

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Extremely Low Voltage and High Speed Deep Trapping MONOS Memory with Good Retention

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306474 ◽

2006 ◽

Cited By ~ 2

Author(s):

A. Chin ◽

C.H. Lai ◽

H.J. Yang ◽

W.J. Chen ◽

Y.H. Wu ◽

...

Keyword(s):

High Speed ◽

Low Voltage ◽

Good Retention

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Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306263 ◽

2006 ◽

Author(s):

H.Y. Yu ◽

M.F. Li ◽

A. Lauwers ◽

J.A. Kittl ◽

R. Singanamalla ◽

...

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2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

An investigation of the effects of Si thickness-induced variation of the electrical characteristics in FDSOI with block oxide

Towards Unification of MOS Compact Models with the Unified Regional Approach

Effects of Homo-buffer Layer on Properties of ZnO Films Grown on Si(1 1 1) by Pulsed Laser Deposition

Models of Source/Drain Bias on Negative Bias Temperature Instability

Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

The effects of incorporating nitrogen into silicon dioxide on gate leakage current in MOSFETs

Lumped behavioral modeling for suspended MEMS

Extremely Low Voltage and High Speed Deep Trapping MONOS Memory with Good Retention

Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

Export Citation Format

2006 8th International Conference on Solid-State and Integrated Circuit Technology ProceedingsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON Gate Dielectric

An investigation of the effects of Si thickness-induced variation of the electrical characteristics in FDSOI with block oxide

Towards Unification of MOS Compact Models with the Unified Regional Approach

Effects of Homo-buffer Layer on Properties of ZnO Films Grown on Si(1 1 1) by Pulsed Laser Deposition

Models of Source/Drain Bias on Negative Bias Temperature Instability

Electrical properties of metamorphic In0.52Al0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

The effects of incorporating nitrogen into silicon dioxide on gate leakage current in MOSFETs

Lumped behavioral modeling for suspended MEMS

Extremely Low Voltage and High Speed Deep Trapping MONOS Memory with Good Retention

Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devices

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
Latest Publications