Strapped Cu interconnect for enhancing electromigration limit for power device application

2020 ◽  
Author(s):  
Young-Joon Park ◽  
Jungwoo Joh ◽  
Jayhoon Chung ◽  
Srikanth Krishnan
Keyword(s):  
Power Device ◽  
Device Application ◽  
Cu Interconnect

Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application

2018 ◽  
Vol 5 (6) ◽  
pp. 065020
Author(s):  
Abu Hussein Nurul Athirah ◽  
Ang Bee Chin ◽  
Wong Yew Hoong ◽  
Ong Boon Hoong ◽  
Baharuddin Aainaa Aqilah
Keyword(s):  
Silicon Substrate ◽  
Power Device ◽  
Synthesis And Characterization ◽  
Device Application

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

2009 ◽  
Vol 615-617 ◽  
pp. 141-144 ◽  
Author(s):  
Ryo Hattori ◽  
Kazuhito Kamei ◽  
Kazuhiko Kusunoki ◽  
Nobuyoshi Yashiro ◽  
S. Shimosaki
Keyword(s):  
Liquid Phase ◽  
Epitaxial Layer ◽  
Liquid Phase Epitaxy ◽  
Basal Plane ◽  
Power Device ◽  
Device Application ◽  
Basal Plane Dislocation ◽  
Low Nitrogen

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

scholarly journals Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

2018 ◽  
Vol 458 ◽  
pp. 949-953 ◽  
Author(s):  
Haiding Sun ◽  
Young Jae Park ◽  
Kuang-Hui Li ◽  
Xinwei Liu ◽  
Theeradetch Detchprohm ◽  
...  
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Power Device ◽  
Band Offset ◽  
Device Application ◽  
Conduction Band Offset

Solution Growth of Off-Axis 4H-SiC for Power Device Application

2008 ◽  
Vol 600-603 ◽  
pp. 179-182 ◽  
Author(s):  
Ryo Hattori ◽  
Kazuhiko Kusunoki ◽  
Nobuyuki Yashiro ◽  
Kazuhito Kamei
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
Drastic Change ◽  
Solution Growth ◽  
Power Device ◽  
Device Application ◽  
Etch Pit

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

Sign in / Sign up

Export Citation Format

Share Document