Structural and electrical properties of 28Si+ and 40Ar+ ion implanted epitaxial ReSi2 films grown on n - Si (100) substrate.

We investigate the structural and electrical properties of polycrystalline 3C-SiC obtained from P ion implanted 4H-SiC with the box-shaped doping profile (NP: 6 x 1020/cm3, thickness: 400 nm, ion dose: 1.6 x 1016/cm2, room temperature). RBS measurement reveals that the highly defective region is formed by P ion implantation, which remains even after annealing at 1700 oC. X-TEM observation shows the P ion induced amorphous layer is recrystallized to twinned-3C-SiC. After annealing at 1300 oC, a sheet resistance of 950 /sq. and sheet carrier concentration of 1 x 1015/cm2 was obtained. By increasing the annealing temperature from 1500 to 1700 oC, the sheet resistance was drastically decreased to about 200 /sq., while there was a small change in the sheet carrier concentration. For the sample annealed at 1700 oC, the electrical activity of the P impurity was estimated to be about 10 % which is comparable to the case of hot implanted sample.

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Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films

Chinese Physics B ◽

10.1088/1674-1056/27/9/096104 ◽

2018 ◽

Vol 27 (9) ◽

pp. 096104

Author(s):

Hui Xu ◽

Jian-Jun Liu ◽

Hai-Tao Ye ◽

D J Coathup ◽

A V Khomich ◽

...

Keyword(s):

Electrical Properties ◽

Diamond Films ◽

Carbon Ion ◽

Ultrananocrystalline Diamond ◽

Structural And Electrical Properties ◽

Ion Implanted

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Structural and electrical properties of nitrogen-ion implanted ZnO nanorods

Current Applied Physics ◽

10.1016/j.cap.2010.11.068 ◽

2011 ◽

Vol 11 (3) ◽

pp. S328-S332 ◽

Cited By ~ 7

Author(s):

C.-H. Kwak ◽

Y.-B. Lee ◽

S.-Y. Seo ◽

S.-H. Kim ◽

C.-I. Park ◽

...

Keyword(s):

Electrical Properties ◽

Zno Nanorods ◽

Structural And Electrical Properties ◽

Nitrogen Ion ◽

Ion Implanted

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Post-Implantation Annealing of SiC: Relevance of the Heating Rate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.561 ◽

2007 ◽

Vol 556-557 ◽

pp. 561-566 ◽

Cited By ~ 1

Author(s):

Roberta Nipoti

Keyword(s):

Electrical Properties ◽

Heating Rate ◽

Room Temperature ◽

Starting Point ◽

Structural And Electrical Properties ◽

Review Study ◽

Post Implantation ◽

Ion Implanted

With the aim to set a starting point for future investigations on the relevance of the heating ramp on the annealing of ion implanted SiC, a review study is presented here. This study focuses on the heating rate of different annealing setups and presents results that highlight the relevance of the heating ramp on the morphological, structural and electrical properties of ion implanted <0001> 4H- and 6H-SiC. The post-implantation annealing results of hot and room temperature implanted SiC are so different that their presentation is kept distinct.

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Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.575 ◽

2007 ◽

Vol 556-557 ◽

pp. 575-578 ◽

Cited By ~ 1

Author(s):

Kenneth A. Jones ◽

M.C. Wood ◽

T.S. Zheleva ◽

K.W. Kirchner ◽

Michael A. Derenge ◽

...

Keyword(s):

Electrical Properties ◽

Annealing Temperature ◽

Structural And Electrical Properties ◽

Ion Implanted

4H-SiC samples implanted with 1020 Al were annealed at various temperatures with a BN/AlN or graphite cap, and there morphological, structural, and electrical properties are compared. No blow holes were observed in either cap. Some Si out-diffuses through the graphite cap which results in a rougher surface and a structurally modified region near the surface. The BN/AlN cap annealed at 1800°C cannot be readily removed, whereas the graphite cap can be removed easily after any annealing temperature. The sheet resistances for both types of samples were about the same.

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