2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications

TOTAL DOCUMENTS

100

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H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781479952885, 9781479952878, 9781479952854, 9781479952861

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

High-accuracy estimation of soft error rate using PHYSERD with circuit simulation

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931634 ◽

2014 ◽

Cited By ~ 2

Author(s):

Takashi Kato ◽

Taiki Uemura ◽

Hideya Matsuyama

Keyword(s):

Error Rate ◽

Circuit Simulation ◽

High Accuracy ◽

Soft Error ◽

Accuracy Estimation ◽

Soft Error Rate

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Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931557 ◽

2014 ◽

Cited By ~ 1

Author(s):

O. Pirrotta ◽

A. Padovani ◽

L. Larcher ◽

L. Zhao ◽

B. Magyari-Kope ◽

...

Keyword(s):

Charge Transport ◽

Oxygen Vacancies ◽

Multi Scale ◽

Scale Modeling ◽

Multi Scale Modeling

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Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931613 ◽

2014 ◽

Cited By ~ 1

Author(s):

Akira Endoh ◽

Issei Watanabe ◽

Akifumi Kasamatsu ◽

Takashi Mimura

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo

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Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931575 ◽

2014 ◽

Cited By ~ 2

Author(s):

Dax M. Crum ◽

Amithraj Valsaraj ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Monte Carlo ◽

Quantum Corrections ◽

Ensemble Monte Carlo ◽

Nano Scale ◽

Classical Ensemble ◽

Monte Carlo Simulator

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[Title page]

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931542 ◽

2014 ◽

Keyword(s):

Title Page

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Effects of carbon-related oxide defects on the reliability of 4H-SiC MOSFETs

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931563 ◽

2014 ◽

Cited By ~ 4

Author(s):

D.P. Ettisserry ◽

N. Goldsman ◽

A. Akturk ◽

A. J. Lelis

Keyword(s):

Oxide Defects

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Self-forces in 3D finite element Monte Carlo simulations of a 10.7 nm gate length SOI FinFET

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931594 ◽

2014 ◽

Cited By ~ 1

Author(s):

M. Aldegunde ◽

K. Kalna

Keyword(s):

Finite Element ◽

Monte Carlo ◽

Monte Carlo Simulations ◽

Gate Length ◽

3D Finite Element

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Predictive modeling of pattern-dependent etch effects in large-area fully-integrated 3D virtual fabrication

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931600 ◽

2014 ◽

Cited By ~ 3

Author(s):

D. Fried ◽

K. Greiner ◽

D. Faken ◽

M. Kamon ◽

A. Pap ◽

...

Keyword(s):

Predictive Modeling ◽

Large Area ◽

Fully Integrated

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Single dopant nanowire transistors: Influence of phonon scattering and temperature

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931628 ◽

2014 ◽

Author(s):

H. Carrillo-Nunez ◽

M. Bescond ◽

E. Dib ◽

N. Cavassilas ◽

M. Lannoo

Keyword(s):

Phonon Scattering ◽

Nanowire Transistors

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DC, AC and noise simulation of organic semiconductor devices based on the master equation

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2014.6931582 ◽

2014 ◽

Cited By ~ 4

Author(s):

Christoph Jungemann ◽

Christoph Zimmermann

Keyword(s):

Master Equation ◽

Organic Semiconductor ◽

Semiconductor Devices ◽

Noise Simulation ◽

Organic Semiconductor Devices

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High-accuracy estimation of soft error rate using PHYSERD with circuit simulation

Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application

Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs

[Title page]

Effects of carbon-related oxide defects on the reliability of 4H-SiC MOSFETs

Self-forces in 3D finite element Monte Carlo simulations of a 10.7 nm gate length SOI FinFET

Predictive modeling of pattern-dependent etch effects in large-area fully-integrated 3D virtual fabrication

Single dopant nanowire transistors: Influence of phonon scattering and temperature

DC, AC and noise simulation of organic semiconductor devices based on the master equation

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications