Band structure tuning of g-C3N4 via sulfur doping for broadband near-infrared ultrafast photonic applications

Graphitic carbon nitride (g-C3N4) featuring a stable heptazine ring structure and high polymerization degree, was indexed as a high thermochemical stability material, attracting rising research enthusiasm for diverse applications. However, the poor near-infrared (NIR) optical absorption and resulting limited NIR applications were pronounced for g-C3N4 due to its large bandgap of 2.7 eV. In the present work, sulfur-doping was manifested by first-principles calculations to introduce impurity level and result in anisotropic spin splitting in g-C3N4 for enhancing broadband nonlinear optical characteristics in NIR regime. The modified sulfur-doped g-C3N4 (S-C3N4) exhibited the maximum effective nonlinear absorption coefficient to be −0.82 cm/GW. Pulse duration within hundred nanoseconds was realized with high modulation stability employing S-C3N4 as saturable absorber in Q-switching operations. Moreover, broadband ultrafast photonics properties were successfully demonstrated in constructed ytterbium-doped and erbium-doped fiber lasers, generating highly stable dissipative soliton and traditional soliton mode-locking pulses. The presented S-C3N4 nanomaterial with remarkable nonlinear optical performances might explicitly boost the development and application of g-C3N4 materials in advanced optoelectronic and ultrafast photonic devices.

Recent Progress of Two-Dimensional Materials for Ultrafast Photonics

Owing to their extraordinary physical and chemical properties, two-dimensional (2D) materials have aroused extensive attention and have been widely used in photonic and optoelectronic devices, catalytic reactions, and biomedicine. In particular, 2D materials possess a unique bandgap structure and nonlinear optical properties, which can be used as saturable absorbers in ultrafast lasers. Here, we mainly review the top-down and bottom-up methods for preparing 2D materials, such as graphene, topological insulators, transition metal dichalcogenides, black phosphorus, and MXenes. Then, we focus on the ultrafast applications of 2D materials at the typical operating wavelengths of 1, 1.5, 2, and 3 μm. The key parameters and output performance of ultrafast pulsed lasers based on 2D materials are discussed. Furthermore, an outlook regarding the fabrication methods and the development of 2D materials in ultrafast photonics is also presented.