1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395)
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Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798814 ◽

2003 ◽

Author(s):

Young-Kwang Kim ◽

Seok-Ha Lee ◽

Hyui-Seung Lee ◽

Bong-Seok Kim ◽

Yong-Hee Lee ◽

...

Keyword(s):

Design Rule ◽

Sintering Process ◽

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Comparison of CHARM-2 and surface potential measurement to monitor plasma induced gate oxide damage

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798824 ◽

2003 ◽

Author(s):

Ming-Yi Lee ◽

J. Hu ◽

W. Catabay ◽

P. Schoenborn ◽

A. Burkus

Keyword(s):

Surface Potential ◽

Potential Measurement ◽

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Suppression of topography dependent charging using a phase-controlled pulsed inductively coupled plasma

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798837 ◽

2003 ◽

Author(s):

Kyoung-Sub Shin ◽

Wan-Jae Park ◽

Ji-Soo Kim ◽

Chang-Jin Kang ◽

Tae-Hyuk Ahn ◽

...

Keyword(s):

Inductively Coupled Plasma ◽

Inductively Coupled

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Plasma vacuum ultraviolet emission in a high density etcher

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798846 ◽

2003 ◽

Author(s):

C. Cismaru ◽

J.L. Shohet ◽

J.P. McVittie

Keyword(s):

Vacuum Ultraviolet ◽

High Density ◽

Ultraviolet Emission

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Effect of low temperature deuterium annealing on plasma process induced damage

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798845 ◽

2003 ◽

Author(s):

S.H. Lee ◽

Y.K. Kim ◽

Y.H. Lee ◽

H.S. Kang ◽

C.G. Ahn ◽

...

Keyword(s):

Low Temperature ◽

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Plasma damage evaluation using matched transistors and determination of damage prevention options

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798817 ◽

2003 ◽

Author(s):

J. Ellis ◽

A.R. Comeau ◽

R. Porter ◽

J. Bossingham ◽

G. Alestig

Keyword(s):

Damage Evaluation ◽

Plasma Damage ◽

Damage Prevention

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On the dependence of plasma-induced charging damage on antenna area

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798799 ◽

2003 ◽

Author(s):

G.S. Hwang ◽

K.P. Giapis

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Plasma-induced charging damage in ultrathin (3 nm) nitrided oxides

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798834 ◽

2003 ◽

Author(s):

C.-C. Chen ◽

H.-C. Lin ◽

C.-Y. Chang ◽

M.-S. Liang ◽

C.-H. Chien ◽

...

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Damascene copper integration

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798841 ◽

2003 ◽

Author(s):

A.K. Stamper ◽

J.E. Heidenreich ◽

D.C. Hubanks ◽

S.L. Luce ◽

T.L. McDevitt

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Dependence of plasma damage on density and T/sub e/ in a decoupled plasma source metal etcher

1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395) ◽

10.1109/ppid.1999.798849 ◽

2003 ◽

Author(s):

S.W. Downey ◽

M.V. Malyshev ◽

V.M. Donnelly ◽

J.I. Colonell ◽

N. Layadi ◽

...

Keyword(s):

Plasma Source ◽

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