30th International Reliability Physics Symposium
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124
(FIVE YEARS 0)

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10
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Published By IEEE

078030473x
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Dislocation Based Mechanisms in Electromigration

1992 ◽  
Author(s):  
B. R. Livesay ◽  
N. E. Donlin ◽  
A. K. Garrison ◽  
H. M. Harris ◽  
J. L. Hubbard

Defect-Free Shallow P/N Junction by Point Defect Engineering

1992 ◽  
Author(s):  
Shigeo Onishi ◽  
Akitsu Ayukawa ◽  
Keiichiro Uda ◽  
Keizo Sakiyama
Keyword(s):  
Point Defect ◽  
Defect Engineering

Hot-Electron-Induced Input Offset Voltage Degradation in CMOS Differential Amplifiers

1992 ◽  
Author(s):  
Shaheen Z. Mohamedi ◽  
Vei-Han Chan ◽  
Jong-Tae Park ◽  
Faran Nouri ◽  
Brad W. Scharf ◽  
...  
Keyword(s):  
Hot Electron ◽  
Differential Amplifiers ◽  
Offset Voltage ◽  
Voltage Degradation

Long-Term Effects of Sidegating on GaAs MESFETs

1992 ◽  
Author(s):  
Hema Cholan ◽  
Douglas Stunkard ◽  
Tony Rubalcava
Keyword(s):  
Long Term Effects

The Effect of Surface Roughness of Si3N4 Films on TDDB Characteristics of ONO Films

1992 ◽  
Author(s):  
Hiroyuki Tanaka ◽  
Hidetsugu Uchida ◽  
Norio Hirashita ◽  
Tsuneo Ajioka
Keyword(s):  
Surface Roughness ◽  
Effect Of Surface

Simulation of CMOS Circuit Degradation due To Hot-Carrier Effects

1992 ◽  
Author(s):  
Khandker N. Quader ◽  
Ping K. Ko ◽  
Chenming Hu ◽  
Peng Fang ◽  
John T. Yue
Keyword(s):  
Cmos Circuit ◽  
Hot Carrier ◽  
Hot Carrier Effects

Electromigration Lifetime as a Function of Line Length or Step Number

1992 ◽  
Author(s):  
Takeshi Nogami ◽  
Shinsuke Oka ◽  
Keiichi Naganuma ◽  
Toshikazu Nakata ◽  
Chizuko Maeda ◽  
...  
Keyword(s):  
Line Length ◽  
Electromigration Lifetime ◽  
Step Number
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