2006 International Symposium on VLSI Technology, Systems, and Applications
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

1424401814, 1424401828

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Effect of H2 Addition during Cu Thin Film Sputtering

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251096 ◽

2006 ◽

Author(s):

Masahiro Ooka ◽

Shin Yokoyama

Keyword(s):

Thin Film ◽

Cu Thin Film ◽

H2 Addition

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Effect of Oxygen Absorption on Contact Resistance between Metal and Carbon Nano Tubes (CNTs)

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251078 ◽

2006 ◽

Cited By ~ 1

Author(s):

Bing-yue Tsui ◽

Chien-li Weng ◽

Chih-lien Chang ◽

Jeng-hua Wei ◽

Ming-jinn Tsai

Keyword(s):

Contact Resistance ◽

Oxygen Absorption ◽

Carbon Nano Tubes ◽

Effect Of Oxygen

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Resistance Increase in Metal Nano-wires

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251097 ◽

2006 ◽

Cited By ~ 2

Author(s):

Hsueh-chung Chen ◽

Hsien-wei Chen ◽

Shin-puu Jeng ◽

Chii-ming Wu ◽

Jack Sun

Keyword(s):

Resistance Increase ◽

Nano Wires

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A Promising Planar Transistor with in-situ Doped Selective Si Epitaxy Technology (GORES MOSFET) for 32nm node and beyond

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251066 ◽

2006 ◽

Cited By ~ 1

Author(s):

Y. Kikuchi ◽

Y. Tateshita ◽

T. Kataoka ◽

J. Wang ◽

Y. Miyanami ◽

...

Keyword(s):

Si Epitaxy

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Metal Gate Technology for 45nm and Beyond

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251086 ◽

2006 ◽

Author(s):

Kentaro Shibahara

Keyword(s):

Metal Gate

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PSDG MOSFET

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251068 ◽

2006 ◽

Author(s):

Deyuan Xiao ◽

Gary Chen ◽

Roger Lee ◽

Daniel Lu ◽

Leong Tan ◽

...

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Detection of Trap Generation in High-κ Gate Stacks due to Constant Voltage Stress

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251089 ◽

2006 ◽

Cited By ~ 1

Author(s):

C.D. Young ◽

D. Heh ◽

R. Choi ◽

J.J. Peterson ◽

J. Barnett ◽

...

Keyword(s):

Constant Voltage ◽

Gate Stacks ◽

Voltage Stress

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Future Prospects of Flexible, Large-Area Sensors and Actuators with Organic Transistor ICs

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251071 ◽

2006 ◽

Author(s):

Takao Someya ◽

Takayasu Sakurai ◽

Tsuyoshi Sekitani

Keyword(s):

Future Prospects ◽

Large Area ◽

Sensors And Actuators ◽

Organic Transistor

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Analysis of Electron and Hole Distributions on Scaled NBit Flash Cells

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251115 ◽

2006 ◽

Cited By ~ 1

Author(s):

I.c. Yang ◽

K.p. Chen ◽

Y.w. Chang ◽

T.c. Lu

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HfxTayNz Metal Gate Electrodes for Advanced MOS Devices Applications

2006 International Symposium on VLSI Technology, Systems, and Applications ◽

10.1109/vtsa.2006.251091 ◽

2006 ◽

Cited By ~ 1

Author(s):

Chin-lung Cheng ◽

Kuei-shu Chang-Liao ◽

Tzu-chen Wang ◽

Tien-ko Wang ◽

Howard Wang

Keyword(s):

Metal Gate Electrodes ◽

Metal Gate ◽

Gate Electrodes ◽

Mos Devices

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2006 International Symposium on VLSI Technology, Systems, and ApplicationsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Effect of H2 Addition during Cu Thin Film Sputtering

Effect of Oxygen Absorption on Contact Resistance between Metal and Carbon Nano Tubes (CNTs)

Resistance Increase in Metal Nano-wires

A Promising Planar Transistor with in-situ Doped Selective Si Epitaxy Technology (GORES MOSFET) for 32nm node and beyond

Metal Gate Technology for 45nm and Beyond

PSDG MOSFET

Detection of Trap Generation in High-κ Gate Stacks due to Constant Voltage Stress

Future Prospects of Flexible, Large-Area Sensors and Actuators with Organic Transistor ICs

Analysis of Electron and Hole Distributions on Scaled NBit Flash Cells

HfxTayNz Metal Gate Electrodes for Advanced MOS Devices Applications

2006 International Symposium on VLSI Technology, Systems, and Applications
Latest Publications