Springer Proceedings in Physics - Polycrystalline Semiconductors II
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Published By Springer Berlin Heidelberg

9783642763878, 9783642763854

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Characterization of Grain Boundaries by the Electron Beam Induced Current Method

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_9 ◽

1991 ◽

pp. 62-71

Author(s):

L. Pasemann

Keyword(s):

Electron Beam ◽

Grain Boundaries ◽

Current Method ◽

Induced Current ◽

Electron Beam Induced Current

Polycrystalline Silicon Carbide Emitters for Heterojunction Bipolar Transistors

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_75 ◽

1991 ◽

pp. 527-532

Author(s):

F. H. Ruddell ◽

D. W. McNeill ◽

B. M. Armstrong ◽

H. S. Gamble

Keyword(s):

Silicon Carbide ◽

Heterojunction Bipolar Transistors ◽

Polycrystalline Silicon ◽

Bipolar Transistors ◽

Polycrystalline Silicon Carbide

XPS Characterization of Co-evaporated CuInSe2 Thin Films

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_64 ◽

1991 ◽

pp. 445-450 ◽

Cited By ~ 1

Author(s):

E. Niemi ◽

L. Stolt

Keyword(s):

Thin Films ◽

Xps Characterization

Non-conventional Semiconductor Materials for Solar Cells

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_61 ◽

1991 ◽

pp. 420-431 ◽

Cited By ~ 5

Author(s):

M. Ch. Lux-Steiner

Keyword(s):

Solar Cells ◽

Semiconductor Materials

Semiconducting Properties of Ferrimagnetic Spinels Cu0.45Co0.55Cr2S4—x Se x , (0.0 ≤ x ≤ 1.5)

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_56 ◽

1991 ◽

pp. 391-396

Author(s):

H. Duda ◽

T. Groń ◽

J. Warczewski

Keyword(s):

Semiconducting Properties

Optical Spectroscopy of Polycrystalline Materials: Theory and Experiments on Group IV Materials

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_54 ◽

1991 ◽

pp. 379-384

Author(s):

V. I. Gavrilenko ◽

S. I. Frolov ◽

V. G. Litovchenko

Keyword(s):

Optical Spectroscopy ◽

Group Iv ◽

Polycrystalline Materials ◽

Theory And Experiments

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_48 ◽

1991 ◽

pp. 342-348 ◽

Cited By ~ 1

Author(s):

T. Sameshima ◽

M. Hara ◽

S. Usui

Keyword(s):

Excimer Laser ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Xecl Excimer Laser

Effect of Si Implantation Condition on the Performance of Polycrystalline Si Thin-Film Transistors

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_42 ◽

1991 ◽

pp. 299-305

Author(s):

M. Fuse ◽

Y. Nishihara ◽

M. Hirota ◽

T. Hamano ◽

I-Wei Wu ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Si Thin Film ◽

Implantation Condition

Dislocation-Related Excitons in Semiconductors

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_4 ◽

1991 ◽

pp. 28-39 ◽

Cited By ~ 8

Author(s):

Yu. T. Rebane ◽

Yu. G. Shreter

Hydrogen-Passivation of Grain Boundaries in Polycrystalline Silicon

Springer Proceedings in Physics - Polycrystalline Semiconductors II ◽

10.1007/978-3-642-76385-4_37 ◽

1991 ◽

pp. 259-265

Author(s):

Ch. Häßler ◽

G. Pensl ◽

M. Schulz

Keyword(s):

Grain Boundaries ◽

Polycrystalline Silicon ◽

Hydrogen Passivation

Springer Proceedings in Physics - Polycrystalline Semiconductors IILatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Characterization of Grain Boundaries by the Electron Beam Induced Current Method

Polycrystalline Silicon Carbide Emitters for Heterojunction Bipolar Transistors

XPS Characterization of Co-evaporated CuInSe2 Thin Films

Non-conventional Semiconductor Materials for Solar Cells

Semiconducting Properties of Ferrimagnetic Spinels Cu0.45Co0.55Cr2S4—x Se x , (0.0 ≤ x ≤ 1.5)

Optical Spectroscopy of Polycrystalline Materials: Theory and Experiments on Group IV Materials

XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs

Effect of Si Implantation Condition on the Performance of Polycrystalline Si Thin-Film Transistors

Dislocation-Related Excitons in Semiconductors

Hydrogen-Passivation of Grain Boundaries in Polycrystalline Silicon

Springer Proceedings in Physics - Polycrystalline Semiconductors II
Latest Publications