polycrystalline silicon carbide
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Blistering-free polycrystalline silicon carbide films for double-sided passivating contact solar cells

2022 ◽  
Vol 238 ◽  
pp. 111586
Author(s):  
Jingming Zheng ◽  
Zhenhai Yang ◽  
Linna Lu ◽  
Mengmeng Feng ◽  
Yuyan Zhi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide

Application of polycrystalline silicon carbide thin films as the passivating contacts for silicon solar cells

2020 ◽  
Vol 206 ◽  
pp. 110329 ◽  
Author(s):  
Zhiyu Xu ◽  
Ke Tao ◽  
Shuai Jiang ◽  
Rui Jia ◽  
Wei Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cells ◽  
Polycrystalline Silicon Carbide

Polycrystalline Silicon Carbide Film Depositon Using Monomethylsilane and Hydrogen Chloride Gases

2019 ◽  
Vol 6 (2) ◽  
pp. 69-81
Author(s):  
Hitoshi Habuka ◽  
Mayuka Watanabe ◽  
Mikiya Nishida ◽  
Takashi Sekiguchi
Keyword(s):  
Silicon Carbide ◽  
Hydrogen Chloride ◽  
Polycrystalline Silicon ◽  
Silicon Carbide Film ◽  
Polycrystalline Silicon Carbide

scholarly journals Face dependent footprints of carpet-like graphene films grown on polycrystalline silicon carbide

Carbon ◽  
2019 ◽  
Vol 153 ◽  
pp. 417-427 ◽  
Author(s):  
C. Ramírez ◽  
E. García ◽  
E. Barrena ◽  
A. De Pablos ◽  
M. Belmonte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Graphene Films ◽  
Polycrystalline Silicon Carbide

The effect of grain-size on fracture of polycrystalline silicon carbide: A multiscale analysis using a molecular dynamics-peridynamics framework

2019 ◽  
Vol 159 ◽  
pp. 341-348 ◽  
Author(s):  
Sourav Gur ◽  
Mohammad Rafat Sadat ◽  
George N. Frantziskonis ◽  
Stefan Bringuier ◽  
Lianyang Zhang ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Grain Size ◽  
Polycrystalline Silicon ◽  
Multiscale Analysis ◽  
Polycrystalline Silicon Carbide

A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

2017 ◽  
Vol 897 ◽  
pp. 383-386 ◽  
Author(s):  
Ken Nakagomi ◽  
Shogo Okuyama ◽  
Hitoshi Habuka ◽  
Yoshinao Takahashi ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Gas Transport ◽  
Etching Rate ◽  
Gas Distributor ◽  
Polycrystalline Silicon Carbide ◽  
Rate Profile ◽  
Sic Wafer

A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and indeactivating the pin-holes at the various positions of the gas distributor, the etching rate profile could be locally adjusted.

scholarly journals Comparative study of irradiation swelling in monocrystalline and polycrystalline silicon carbide

2017 ◽  
Vol 66 (6) ◽  
pp. 066104
Author(s):  
Zang Hang ◽  
Huang Zhi-Sheng ◽  
Li Tao ◽  
Guo Rong-Ming
Keyword(s):  
Silicon Carbide ◽  
Comparative Study ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide
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