24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02

1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049053 ◽

2003 ◽

Cited By ~ 7

Author(s):

M. Sato ◽

H. Shigematsu ◽

Y. Inoue ◽

T. Arai ◽

K. Sawada ◽

...

Keyword(s):

Gain Bandwidth

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An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049055 ◽

2003 ◽

Cited By ~ 1

Author(s):

J.H. Kim ◽

Y.S. Noh ◽

Y.S. Kim ◽

S.G. Kim ◽

...

Keyword(s):

Power Amplifier ◽

Mobile Communication ◽

Power Level ◽

Smart Power

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1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-μm GaAs PHEMTs

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049025 ◽

2003 ◽

Cited By ~ 7

Author(s):

A. Bessemoulin ◽

J. Dishong ◽

G. Clark ◽

D. White ◽

P. Quentin ◽

...

Keyword(s):

Power Amplifier ◽

High Power ◽

Ka Band ◽

High Power Amplifier

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Reliability of InGaP emitter HBTs at high collector voltage

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049032 ◽

2003 ◽

Cited By ~ 6

Author(s):

B. Yeats ◽

M. Bonse ◽

P. Chandler ◽

M. Culver ◽

D. D'Avanzo ◽

...

Keyword(s):

Collector Voltage

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A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049057 ◽

2003 ◽

Cited By ~ 1

Author(s):

A. Bessemoulin ◽

M.R. Quay ◽

S. Ramberger ◽

M. Schlechtweg

Keyword(s):

Power Amplifier ◽

High Power ◽

High Power Amplifier ◽

X Band

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High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049075 ◽

2003 ◽

Cited By ~ 9

Author(s):

Y. Yang ◽

J. Frackoviak ◽

C.T. Liu ◽

C.J. Chen ◽

L.-L. Chua ◽

...

Keyword(s):

Optical Communication ◽

Communication Systems ◽

High Speed ◽

High Performance ◽

High Uniformity ◽

Optical Communication Systems

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SiGe differential transimpedance amplifier with 50 GHz bandwidth

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049031 ◽

2003 ◽

Cited By ~ 3

Author(s):

J.S. Weiner ◽

A. Leven ◽

V. Houtsma ◽

Y. Baeyens ◽

Y.K. Chen ◽

...

Keyword(s):

Transimpedance Amplifier

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Adaptive modeling and design of highly integrated 3D microwave-millimeter wave radio front-ends

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049040 ◽

2003 ◽

Author(s):

E.M. Tentzeris

Keyword(s):

Millimeter Wave ◽

Adaptive Modeling ◽

Wave Radio

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87 GHz static frequency divider in an InP-based mesa DHBT technology

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049081 ◽

2003 ◽

Cited By ~ 10

Author(s):

S. Krishnan ◽

Z. Griffith ◽

M. Urteaga ◽

Y. Wei ◽

D. Scott

Keyword(s):

Frequency Divider

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Transforming MMICs

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02 ◽

10.1109/gaas.2002.1049017 ◽

2003 ◽

Cited By ~ 3

Author(s):

E.J. Martinez

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology

An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals

1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-μm GaAs PHEMTs

Reliability of InGaP emitter HBTs at high collector voltage

A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

SiGe differential transimpedance amplifier with 50 GHz bandwidth

Adaptive modeling and design of highly integrated 3D microwave-millimeter wave radio front-ends

87 GHz static frequency divider in an InP-based mesa DHBT technology

Transforming MMICs

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology

An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals

1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-μm GaAs PHEMTs

Reliability of InGaP emitter HBTs at high collector voltage

A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

SiGe differential transimpedance amplifier with 50 GHz bandwidth

Adaptive modeling and design of highly integrated 3D microwave-millimeter wave radio front-ends

87 GHz static frequency divider in an InP-based mesa DHBT technology

Transforming MMICs

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu GAAS-02
Latest Publications