GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

2005 ◽

Author(s):

J.-E. Muller ◽

A. Bangert ◽

T. Gravel ◽

M. Karner ◽

H. Riechert ◽

...

Keyword(s):

Automotive Radar ◽

Radar Systems

Download Full-text

Ion-implanted GaAs JFETs with f/sub t/<45 GHz for low-power electronics

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567836 ◽

2002 ◽

Author(s):

J.C. Zolper ◽

A.G. Baca ◽

M.E. Sherwin ◽

V.M. Hietala ◽

J. Shul

Keyword(s):

Low Power ◽

Power Electronics ◽

Low Power Electronics ◽

Ion Implanted

Download Full-text

A 50 W low distortion GaAs MESFET for digital cellular base stations

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567755 ◽

2002 ◽

Author(s):

F. Ono ◽

F. Emori ◽

K. Asano ◽

J. Morikawa ◽

M. Kanamori ◽

...

Keyword(s):

Base Stations ◽

Gaas Mesfet ◽

Digital Cellular ◽

Low Distortion

Download Full-text

A new low-noise, low-distortion and low-power-consumption variable gain amplifier for digital cellular phones

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567872 ◽

2002 ◽

Cited By ~ 3

Author(s):

K. Motoyoshi ◽

T. Tambo ◽

K. Tara ◽

M. Hagio

Keyword(s):

Power Consumption ◽

Low Power ◽

Low Noise ◽

Variable Gain Amplifier ◽

Low Power Consumption ◽

Cellular Phones ◽

Variable Gain ◽

Digital Cellular ◽

Low Distortion

Download Full-text

A 500 MHz complementary gallium arsenide clock multiplier

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567899 ◽

2002 ◽

Author(s):

V. Mazzotta ◽

D. Foster

Keyword(s):

Gallium Arsenide

Download Full-text

A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 μm E-/D-HEMT-technology

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567744 ◽

2002 ◽

Cited By ~ 2

Author(s):

P. Leber ◽

W. Baumberger ◽

M. Lang ◽

M. Rieger-Motzer ◽

W. Bronner ◽

...

Keyword(s):

Phase Locked Loop ◽

Single Chip

Download Full-text

High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567746 ◽

2002 ◽

Cited By ~ 6

Author(s):

T. Miura ◽

T. Shimura ◽

K. Mori ◽

Y. Uneme ◽

H. Nakano ◽

...

Keyword(s):

High Efficiency ◽

Supply Voltage ◽

Cellular Phones ◽

Digital Cellular ◽

Low Supply Voltage

Download Full-text

80 GHz AlGaAs HBT oscillator

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567887 ◽

2002 ◽

Cited By ~ 17

Author(s):

I. Aoki ◽

K. Tezuka ◽

H. Matsuura ◽

S. Kobayashi ◽

T. Fujita ◽

...

Download Full-text

Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567833 ◽

2002 ◽

Cited By ~ 7

Author(s):

T. Tokumitsu ◽

M. Hirano ◽

K. Yamasaki ◽

C. Yamaguchi ◽

M. Aikawa

Download Full-text

A monolithic integrated HEMT-HBT S-band receiver

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 ◽

10.1109/gaas.1996.567868 ◽

2002 ◽

Cited By ~ 4

Author(s):

K.W. Kobayashi ◽

A.K. Oki ◽

D.K. Umemoto ◽

T.R. Block ◽

D.C. Streit

Download Full-text

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A GaAs HEMT MMIC Chip Set For Automotive Radar Systems Fabricated By Optical Stepper Lithography

Ion-implanted GaAs JFETs with f/sub t/<45 GHz for low-power electronics

A 50 W low distortion GaAs MESFET for digital cellular base stations

A new low-noise, low-distortion and low-power-consumption variable gain amplifier for digital cellular phones

A 500 MHz complementary gallium arsenide clock multiplier

A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 μm E-/D-HEMT-technology

High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones

80 GHz AlGaAs HBT oscillator

Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

A monolithic integrated HEMT-HBT S-band receiver

Export Citation Format

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A GaAs HEMT MMIC Chip Set For Automotive Radar Systems Fabricated By Optical Stepper Lithography

Ion-implanted GaAs JFETs with f/sub t/<45 GHz for low-power electronics

A 50 W low distortion GaAs MESFET for digital cellular base stations

A new low-noise, low-distortion and low-power-consumption variable gain amplifier for digital cellular phones

A 500 MHz complementary gallium arsenide clock multiplier

A completely integrated single-chip phase-locked loop with a 15 GHz VCO using 0.2 μm E-/D-HEMT-technology

High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones

80 GHz AlGaAs HBT oscillator

Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

A monolithic integrated HEMT-HBT S-band receiver

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996
Latest Publications