2020 IEEE International Conference on Semiconductor Electronics (ICSE)
Latest Publications

TOTAL DOCUMENTS

55

(FIVE YEARS 55)

H-INDEX

1

(FIVE YEARS 1)

Published By IEEE

9781728159683

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A comparative study on the performance of 1S-1R and Complementary resistive switching models

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166874 ◽

2020 ◽

Author(s):

Arya Lekshmi Jagath ◽

T. Nandha Kumar

Keyword(s):

Comparative Study ◽

Resistive Switching ◽

Switching Models

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Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166887 ◽

2020 ◽

Author(s):

Firas Natheer Abdul-kadir Agha ◽

Yasir Hashim ◽

Mohammed Nazmus Shakib

Keyword(s):

Temperature Impact

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ICSE 2020 Committees

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166850 ◽

2020 ◽

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ICSE 2020 List of Reviewers

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166852 ◽

2020 ◽

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ICSE 2020 Cover Page

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166873 ◽

2020 ◽

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Preliminary Study on Laser Annealed NP Junction in Phosphorus Implanted Germanium

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166881 ◽

2020 ◽

Author(s):

Siti Rahmah Aid ◽

Nur Nadhirah Mohd Rashid ◽

Nur Farhana Arissa Jonny ◽

Anthony Centeno ◽

Hiroshi Ikenoue

Keyword(s):

Preliminary Study

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An Envelope Domain Probe into Nonlinear Behaviour of a High Frequency Power Transistor

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166904 ◽

2020 ◽

Author(s):

Muhammad Akmal Chaudhary

Keyword(s):

High Frequency ◽

Nonlinear Behaviour ◽

High Frequency Power ◽

Power Transistor ◽

Frequency Power

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Model analysis on the geometrical and technological aspect of Bi2Te3 based MEMS thermoelectric

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166901 ◽

2020 ◽

Author(s):

Nurkhaizan Zulkepli ◽

Jumril Yunas ◽

Mohd Ambri Mohamed ◽

Azrul Azlan Hamzah

Keyword(s):

Model Analysis ◽

Technological Aspect

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First Principles Study on Electronic and Optical Properties of Graphene/MoS2 for Optoelectronic Application

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166878 ◽

2020 ◽

Author(s):

Siti Nabilah Mohd Halim ◽

Siti Nur Fatin Zuikafly ◽

Mohamad Fariz Mohamad Taib ◽

Fauzan Ahmad

Keyword(s):

Optical Properties ◽

First Principles ◽

Electronic And Optical Properties ◽

Optoelectronic Application ◽

First Principles Study

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ICSE 2020 Author Index

2020 IEEE International Conference on Semiconductor Electronics (ICSE) ◽

10.1109/icse49846.2020.9166859 ◽

2020 ◽

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