Simulation of Semiconductor Processes and Devices 2001
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Published By Springer Vienna

9783709172780, 9783709162446
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scholarly journals Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator

2001 ◽  
pp. 400-403
Author(s):  
Hyunchul Nah ◽  
Young June Park ◽  
Hong-Shick Min ◽  
Chanho Lee ◽  
Hyungsoon Shin
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

The modeling of a SOI microelectromechanical sensor

2001 ◽  
pp. 328-331 ◽  
Author(s):  
C. Ravariu’ ◽  
F. Ravariu ◽  
A. Rusu’ ◽  
D. Dobrescu’ ◽  
L. Dobrescu’

TCAD Analysis of Gain Cell Retention Time for SRAM Applications

2001 ◽  
pp. 416-419
Author(s):  
A. Gehring ◽  
C. Heitzinger ◽  
T. Grasser ◽  
S. Selberherr
Keyword(s):  
Retention Time ◽  
Cell Retention

Analysis of Ultra Short MOSFETs with High-k Gate Dielectrics

2001 ◽  
pp. 412-415
Author(s):  
K. Dragosits ◽  
Youri Ponomarev ◽  
Charles Dachs ◽  
S. Selberherr
Keyword(s):  
Gate Dielectrics ◽  
High K

Model of Pocket-Implant Mosfets for Circuit Simulation

2001 ◽  
pp. 392-395 ◽  
Author(s):  
D. Kitamaru ◽  
H. Ueno ◽  
M. Tanaka ◽  
M. Miura-Mattausch ◽  
K. Morikawa ◽  
...  
Keyword(s):  
Circuit Simulation

Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics

2001 ◽  
pp. 388-391
Author(s):  
Yutao Ma ◽  
Lifeng Chen ◽  
Bo Jiang ◽  
Min Zhang ◽  
Lilin Tian ◽  
...  
Keyword(s):  
Quantum Mechanical ◽  
Mechanical Effects ◽  
Quantum Mechanical Effects

Parameter and Coupling Ratio Extraction for SPICE-Compatible MACRO Modeling of Source Side Injection (SSI) Flash Cell

2001 ◽  
pp. 356-359 ◽  
Author(s):  
Sang-Pil SimPing Guoe ◽  
Al Kordesche ◽  
Ben Leee ◽  
Chun-Mai Liue ◽  
Kwyro Leee ◽  
...  
Keyword(s):  
Coupling Ratio ◽  
Macro Modeling
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