Simulation of Semiconductor Processes and Devices 2001
Latest Publications

TOTAL DOCUMENTS

102

(FIVE YEARS 0)

H-INDEX

4

(FIVE YEARS 0)

Published By Springer Vienna

9783709172780, 9783709162446

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

TCAD Analysis of Gain Cell Retention Time for SRAM Applications

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_96 ◽

2001 ◽

pp. 416-419

Author(s):

A. Gehring ◽

C. Heitzinger ◽

T. Grasser ◽

S. Selberherr

Keyword(s):

Retention Time ◽

Download Full-text

Analysis of Ultra Short MOSFETs with High-k Gate Dielectrics

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_95 ◽

2001 ◽

pp. 412-415

Author(s):

K. Dragosits ◽

Youri Ponomarev ◽

Charles Dachs ◽

S. Selberherr

Keyword(s):

Gate Dielectrics ◽

Download Full-text

Model of Pocket-Implant Mosfets for Circuit Simulation

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_90 ◽

2001 ◽

pp. 392-395 ◽

Author(s):

D. Kitamaru ◽

H. Ueno ◽

M. Tanaka ◽

M. Miura-Mattausch ◽

K. Morikawa ◽

...

Keyword(s):

Circuit Simulation

Download Full-text

Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_89 ◽

2001 ◽

pp. 388-391

Author(s):

Yutao Ma ◽

Lifeng Chen ◽

Bo Jiang ◽

Min Zhang ◽

Lilin Tian ◽

...

Keyword(s):

Quantum Mechanical ◽

Mechanical Effects ◽

Quantum Mechanical Effects

Download Full-text

Robust Method for Fast and Accurate Simulation of Random Dopant Fluctuation-Induced Vth Variation in MOSFETs with Arbitrary Complex Doping Distribution

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_84 ◽

2001 ◽

pp. 368-371

Author(s):

Indranil De ◽

Andrei Shibkov ◽

Sharad Saxena

Keyword(s):

Robust Method ◽

Random Dopant Fluctuation ◽

Arbitrary Complex ◽

Complex Doping ◽

Download Full-text

Theoretical Calculation of a Charged Particle Detector’s Response Fabricated by Semi Insulating (SI) GaAs

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_82 ◽

2001 ◽

pp. 360-363

Author(s):

Vasilios G Theonas ◽

G. Papaioannou

Keyword(s):

Charged Particle ◽

Theoretical Calculation

Download Full-text

Parameter and Coupling Ratio Extraction for SPICE-Compatible MACRO Modeling of Source Side Injection (SSI) Flash Cell

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_81 ◽

2001 ◽

pp. 356-359 ◽

Author(s):

Sang-Pil SimPing Guoe ◽

Al Kordesche ◽

Ben Leee ◽

Chun-Mai Liue ◽

Kwyro Leee ◽

...

Keyword(s):

Coupling Ratio ◽

Download Full-text

Investigation of a Novel Rapid Thermal Processing Concept Using an Electro-Optically Controlled Radiation Cavity

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_78 ◽

2001 ◽

pp. 344-347

Author(s):

N. E. B. Cowern ◽

F. Roozeboom ◽

P. Van der Sluis

Keyword(s):

Thermal Processing ◽

Rapid Thermal Processing

Download Full-text

A Simulation Evaluation of 100nm CMOS Device Performance

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_64 ◽

2001 ◽

pp. 288-291

Author(s):

S K Jones ◽

D J Bazley ◽

E Augendre ◽

G Badenes ◽

A K Keersgieter IMEC ◽

...

Keyword(s):

Device Performance ◽

Simulation Evaluation

Download Full-text

3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER

Simulation of Semiconductor Processes and Devices 2001 ◽

10.1007/978-3-7091-6244-6_36 ◽

2001 ◽

pp. 162-169 ◽

Author(s):

Asen Asenov

Keyword(s):

Oxide Thickness ◽

Statistical Simulation ◽

Intrinsic Fluctuations

Download Full-text