Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941496 ◽

2002 ◽

Cited By ~ 1

Author(s):

M.M. Lau ◽

C.T. Hsu ◽

Y.T. Yeow

Keyword(s):

Small Signal ◽

Hot Carrier ◽

Signal Characteristics

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Failure analysis from the back side of a die

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941484 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Liebert

Keyword(s):

Failure Analysis ◽

Back Side

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Development and optimization of substrate failure analysis techniques for chip scale packages

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941458 ◽

2002 ◽

Author(s):

Lam Boon Yew ◽

C. Francis ◽

S. Mohamed ◽

Tang Wye Mun ◽

Lim Too Ki

Keyword(s):

Failure Analysis ◽

Analysis Techniques

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A dry migration? Copper dendrite growth in adhesive tape during burn-in

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941481 ◽

2002 ◽

Cited By ~ 6

Author(s):

S.H. Tan ◽

S.H. Ong

Keyword(s):

Dendrite Growth ◽

Adhesive Tape

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Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941465 ◽

2002 ◽

Cited By ~ 4

Author(s):

G.B. Ang ◽

Y.N. Hua ◽

S.K. Loh ◽

Yogaspari ◽

S. Redkar

Keyword(s):

Failure Analysis ◽

Focused Ion Beam ◽

Ion Beam ◽

Wafer Fabrication ◽

Voltage Contrast

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Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941455 ◽

2002 ◽

Author(s):

Wei Yip Loh ◽

Byung Jin Cho ◽

Ming Fu Li

Keyword(s):

Gate Oxides ◽

Current Stressing

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Application of focused ion beam system as a defect localization and root cause analysis tool

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941466 ◽

2002 ◽

Cited By ~ 2

Author(s):

C.C. Ooi ◽

K.H. Siek ◽

K.S. Sim

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Root Cause Analysis ◽

Analysis Tool ◽

Cause Analysis ◽

Root Cause ◽

Beam System ◽

Defect Localization

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Stress-induced leakage current in thin oxides under high-field impulse stressing

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941492 ◽

2002 ◽

Author(s):

Y.N. Tan ◽

W.K. Chim ◽

P.S. Lim

Keyword(s):

Leakage Current ◽

High Field ◽

Stress Induced Leakage Current

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Novel diode structures and ESD protection circuits in a 1.8-V 0.15-μm partially-depleted SOI salicided CMOS process

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941462 ◽

2002 ◽

Author(s):

Ming-Dou Ker ◽

Kei-Kang Hung ◽

H.T.-H. Tang ◽

S.-C. Huang ◽

S.-S. Chen ◽

...

Keyword(s):

Cmos Process ◽

Esd Protection ◽

Protection Circuits

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Failure mechanism study for high resistance contact in CMOS devices

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941470 ◽

2002 ◽

Cited By ~ 5

Author(s):

J.Y. Dai ◽

S. Ansari ◽

C.L. Tay ◽

S.F. Tee ◽

E. Er ◽

...

Keyword(s):

Failure Mechanism ◽

High Resistance ◽

Mechanism Study

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode

Failure analysis from the back side of a die

Development and optimization of substrate failure analysis techniques for chip scale packages

A dry migration? Copper dendrite growth in adhesive tape during burn-in

Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication

Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

Application of focused ion beam system as a defect localization and root cause analysis tool

Stress-induced leakage current in thin oxides under high-field impulse stressing

Novel diode structures and ESD protection circuits in a 1.8-V 0.15-μm partially-depleted SOI salicided CMOS process

Failure mechanism study for high resistance contact in CMOS devices

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode

Failure analysis from the back side of a die

Development and optimization of substrate failure analysis techniques for chip scale packages

A dry migration? Copper dendrite growth in adhesive tape during burn-in

Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication

Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

Application of focused ion beam system as a defect localization and root cause analysis tool

Stress-induced leakage current in thin oxides under high-field impulse stressing

Novel diode structures and ESD protection circuits in a 1.8-V 0.15-μm partially-depleted SOI salicided CMOS process

Failure mechanism study for high resistance contact in CMOS devices

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)
Latest Publications