Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941496 ◽

2002 ◽

Cited By ~ 1

Author(s):

M.M. Lau ◽

C.T. Hsu ◽

Y.T. Yeow

Keyword(s):

Small Signal ◽

Hot Carrier ◽

Signal Characteristics

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Failure analysis from the back side of a die

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941484 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Liebert

Keyword(s):

Failure Analysis ◽

Back Side

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Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941455 ◽

2002 ◽

Author(s):

Wei Yip Loh ◽

Byung Jin Cho ◽

Ming Fu Li

Keyword(s):

Gate Oxides ◽

Current Stressing

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Development and optimization of substrate failure analysis techniques for chip scale packages

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941458 ◽

2002 ◽

Author(s):

Lam Boon Yew ◽

C. Francis ◽

S. Mohamed ◽

Tang Wye Mun ◽

Lim Too Ki

Keyword(s):

Failure Analysis ◽

Analysis Techniques

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A dry migration? Copper dendrite growth in adhesive tape during burn-in

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941481 ◽

2002 ◽

Cited By ~ 6

Author(s):

S.H. Tan ◽

S.H. Ong

Keyword(s):

Dendrite Growth ◽

Adhesive Tape

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Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941465 ◽

2002 ◽

Cited By ~ 4

Author(s):

G.B. Ang ◽

Y.N. Hua ◽

S.K. Loh ◽

Yogaspari ◽

S. Redkar

Keyword(s):

Failure Analysis ◽

Focused Ion Beam ◽

Ion Beam ◽

Wafer Fabrication ◽

Voltage Contrast

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Application of focused ion beam system as a defect localization and root cause analysis tool

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941466 ◽

2002 ◽

Cited By ~ 2

Author(s):

C.C. Ooi ◽

K.H. Siek ◽

K.S. Sim

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Root Cause Analysis ◽

Analysis Tool ◽

Cause Analysis ◽

Root Cause ◽

Beam System ◽

Defect Localization

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Stress-induced leakage current in thin oxides under high-field impulse stressing

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941492 ◽

2002 ◽

Author(s):

Y.N. Tan ◽

W.K. Chim ◽

P.S. Lim

Keyword(s):

Leakage Current ◽

High Field ◽

Stress Induced Leakage Current

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Modeling failure modes for submicron devices

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941477 ◽

2002 ◽

Cited By ~ 2

Author(s):

W. McMahon ◽

A. Haggag ◽

K. Hess

Keyword(s):

Failure Modes ◽

Submicron Devices

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Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941464 ◽

2002 ◽

Cited By ~ 9

Author(s):

Z.G. Song ◽

G. Qian ◽

J.Y. Dai ◽

Z.R. Guo ◽

S.K. Loh ◽

...

Keyword(s):

Failure Analysis ◽

Ion Beam ◽

Random Access ◽

Random Access Memory ◽

Static Random Access Memory ◽

Access Memory ◽

Voltage Contrast

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode

Failure analysis from the back side of a die

Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

Development and optimization of substrate failure analysis techniques for chip scale packages

A dry migration? Copper dendrite growth in adhesive tape during burn-in

Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication

Application of focused ion beam system as a defect localization and root cause analysis tool

Stress-induced leakage current in thin oxides under high-field impulse stressing

Modeling failure modes for submicron devices

Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode

Failure analysis from the back side of a die

Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

Development and optimization of substrate failure analysis techniques for chip scale packages

A dry migration? Copper dendrite growth in adhesive tape during burn-in

Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication

Application of focused ion beam system as a defect localization and root cause analysis tool

Stress-induced leakage current in thin oxides under high-field impulse stressing

Modeling failure modes for submicron devices

Application of contact-level ion-beam induced passive voltage contrast in failure analysis of static random access memory

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)
Latest Publications