Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films

1988 ◽  
pp. 353-358 ◽  
Author(s):  
A. G. Dias ◽  
E. Bustarret ◽  
R. C. da Silva
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Amorphous Silicon Dioxide

Leakage currents and silicon dangling bonds in amorphous silicon dioxide thin films

2000 ◽  
Vol 266-269 ◽  
pp. 835-839 ◽  
Author(s):  
P.M. Lenahan ◽  
J.J. Mele ◽  
R.K. Lowry ◽  
D. Woodbury
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Dangling Bonds ◽  
Leakage Currents ◽  
Amorphous Silicon Dioxide

Electronic conduction and instabilities in thin films of amorphous silicon dioxide

1986 ◽  
Vol 53 (2) ◽  
pp. 115-131 ◽  
Author(s):  
J. J. Delima ◽  
K. V. Krishna ◽  
A. E. Owen
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Electronic Conduction ◽  
Amorphous Silicon Dioxide

ChemInform Abstract: Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films. Part 2. a-SiNx:H

ChemInform ◽  
2010 ◽  
Vol 23 (22) ◽  
pp. no-no
Author(s):  
W. L. WARREN ◽  
J. KANICKI ◽  
F. C. RONG ◽  
E. H. POINDEXTER
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Amorphous Silicon Nitride ◽  
Amorphous Silicon Dioxide

ChemInform Abstract: Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films. Part 1. a-SiO2

ChemInform ◽  
2010 ◽  
Vol 23 (21) ◽  
pp. no-no
Author(s):  
W. L. WARREN ◽  
E. H. POINDEXTER ◽  
M. OFFENBERG ◽  
W. MUELLER-WARMUTH
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Amorphous Silicon Nitride ◽  
Amorphous Silicon Dioxide

Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: I .

1992 ◽  
Vol 139 (3) ◽  
pp. 872-880 ◽  
Author(s):  
W. L. Warren ◽  
E. H. Poindexter ◽  
M. Offenberg ◽  
W. Müller‐Warmuth
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Amorphous Silicon Nitride ◽  
Amorphous Silicon Dioxide

Electron back-scattered diffraction of crystallized vanadium dioxide thin films on amorphous silicon dioxide

2012 ◽  
Vol 520 (7) ◽  
pp. 2461-2466 ◽  
Author(s):  
Felipe Rivera ◽  
Laurel Burk ◽  
Robert Davis ◽  
Richard Vanfleet
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Vanadium Dioxide ◽  
Amorphous Silicon Dioxide ◽  
Electron Back Scattered Diffraction ◽  
Vanadium Dioxide Thin Films

Paramagnetic Point Defects in Amorphous Silicon Dioxide and Amorphous Silicon Nitride Thin Films: II .

1992 ◽  
Vol 139 (3) ◽  
pp. 880-889 ◽  
Author(s):  
W. L. Warren ◽  
J. Kanicki ◽  
F. C. Rong ◽  
E. H. Poindexter
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Amorphous Silicon Nitride ◽  
Amorphous Silicon Dioxide

Thermoanalytic and spectroscopic investigations of hydride structures on the surface of amorphous silicon dioxide

2001 ◽  
Vol 3 (23) ◽  
pp. 5145-5149 ◽  
Author(s):  
Marek Braun ◽  
Klaus Nestler ◽  
Günter Marx
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Amorphous Silicon Dioxide ◽  
Spectroscopic Investigations

scholarly journals Сравнительный фотолюминесцентный анализ точечных дефектов в SiO-=SUB=-2-=/SUB=-, индуцированных имплантацией ионов Ar-=SUP=-+-=/SUP=- и облучением нейтронами

2019 ◽  
Vol 45 (5) ◽  
pp. 24
Author(s):  
И.П. Щербаков ◽  
А.Е. Чмель
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Photoluminescence Spectrum ◽  
Thermal Neutrons ◽  
Optical Transitions ◽  
Atomic Collisions ◽  
Amorphous Silicon Dioxide ◽  
Spectral Bands ◽  
Atomic Nuclei

AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).

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