2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding
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39

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Published By IEEE

9781457714313, 9781457714283, 9781457714306

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Phase change and optical band gap behavior of Ge-Zn-Te chalcogenide films

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137083 ◽

2011 ◽

Author(s):

Guoxiang Wang ◽

Qiuhua Nie ◽

Xiang Shen ◽

Tiefeng Xu ◽

Shixun Dai

Keyword(s):

Phase Change ◽

Band Gap ◽

Optical Band Gap ◽

Chalcogenide Films

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Hybrid SSD with PCM

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137103 ◽

2011 ◽

Author(s):

Yining Liu ◽

Chuangshi Zhou ◽

Xiaohua Cheng

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Fast pulse analysis of TiO2 based RRAM nano-crossbar devices

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137092 ◽

2011 ◽

Author(s):

C. Hermes ◽

F. Lentz ◽

R. Waser ◽

R. Bruchhaus ◽

S. Menzel ◽

...

Keyword(s):

Pulse Analysis ◽

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Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137098 ◽

2011 ◽

Author(s):

Y. Y. Fu ◽

A. D. Li ◽

X. J. Liu ◽

X. F. Li ◽

D. Wu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Flash Memory ◽

Atomic Layer ◽

Layer Deposition ◽

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Crystallinity and its influence on physical and magnetic properties in phase change magnetic materials

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137109 ◽

2011 ◽

Author(s):

J. C. Huang ◽

W. D. Song ◽

L. P. Shi ◽

R. Zhao ◽

T. C. Chong ◽

...

Keyword(s):

Magnetic Properties ◽

Phase Change ◽

Magnetic Materials

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Circuit design for 128Mb PCRAM based on 40nm technology

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137087 ◽

2011 ◽

Author(s):

Daolin Cai ◽

Houpeng Chen ◽

Xi Li ◽

Qian Wang ◽

Zhitang Song

Keyword(s):

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Electrical properties and microscopic structure of amorphous chalcogenides

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137101 ◽

2011 ◽

Author(s):

D. Ielmini ◽

A. L. Lacaita

Keyword(s):

Electrical Properties ◽

Microscopic Structure ◽

Amorphous Chalcogenides

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NVMTS 2011 Best Students

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137110 ◽

2011 ◽

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Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137093 ◽

2011 ◽

Author(s):

Min-Chen Chen ◽

Ting-Chang Chang ◽

Sheng-Yao Huang ◽

Simon M. Sze ◽

Ming-Jinn Tsai

Keyword(s):

Memory Switching

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Investigation of charge trap and loss characteristics for charge trap memory by electrostatic force microscopy

2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding ◽

10.1109/nvmts.2011.6137099 ◽

2011 ◽

Author(s):

Chenxin Zhu ◽

Rong Yang ◽

Zongliang Huo ◽

Zhongguang Xu ◽

Dongxia Shi ◽

...

Keyword(s):

Electrostatic Force ◽

Electrostatic Force Microscopy ◽

Charge Trap ◽

Force Microscopy

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