ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
Latest Publications

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3.6 mΩcm/sup 2/, 1726V 4H-SiC normally-off trenched-and-implanted vertical JFETs

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225228 ◽

2004 ◽

Cited By ~ 2

Author(s):

J.H. Zhao ◽

K. Tone ◽

X. Li ◽

P. Alexandrov ◽

L. Fursin ◽

...

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Measurements and simulations of self-heating and switching with 4H-SiC power BJTs

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225305 ◽

2004 ◽

Cited By ~ 2

Author(s):

M. Domeij ◽

E. Danielsson ◽

W. Liu ◽

U. Zimmermann ◽

C.-M. Zetterling ◽

...

Keyword(s):

Self Heating

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Cost-effective approach in LDMOS with partial 0.35μm design into conventional 0.6μm process

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225274 ◽

2004 ◽

Author(s):

T. Kubota ◽

K. Watanabe ◽

K. Karouji ◽

M. Ueno ◽

Y. Anai ◽

...

Keyword(s):

Cost Effective ◽

Cost Effective Approach

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Hot spot dynamics in quasivertical DMOS under ESD stress

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225235 ◽

2004 ◽

Cited By ~ 5

Author(s):

M. Denison ◽

M. Blaho ◽

D. Silber ◽

J. Joos ◽

N. Jensen ◽

...

Keyword(s):

Hot Spot

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Method for electrical detection of bond wire lift-off for power semiconductors

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225295 ◽

2004 ◽

Cited By ~ 10

Author(s):

J. Lehmann ◽

M. Netzel ◽

R. Herzer ◽

S. Pawel

Keyword(s):

Electrical Detection ◽

Power Semiconductors ◽

Bond Wire ◽

Lift Off

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A high voltage CMOS ADSL line driver

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225241 ◽

2004 ◽

Cited By ~ 2

Author(s):

K.K. Ghosh ◽

C.A.T. Salama

Keyword(s):

High Voltage ◽

Line Driver

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Applying DMOSTs, diodes and thyristors above and below substrate in thin-layer SOI

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225271 ◽

2004 ◽

Cited By ~ 3

Author(s):

M.J. Swanenberg ◽

A.W. Ludikhuize ◽

A. Grakist

Keyword(s):

Thin Layer

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1.7kV NPT V-groove clustered IGBT: fabrication and experimental demonstration

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225298 ◽

2004 ◽

Cited By ~ 2

Author(s):

O. Spulber ◽

M. Sweet ◽

K. Vershinin ◽

N. Luther-King ◽

E.M. Sankara-Narayanan ◽

...

Keyword(s):

Experimental Demonstration

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Development and demonstration of silicon carbide (SiC) inverter module in motor drive

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225247 ◽

2004 ◽

Cited By ~ 1

Author(s):

H.-R. Chang ◽

E. Hanna ◽

A.V. Radun

Keyword(s):

Silicon Carbide ◽

Motor Drive

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A new power W-gated trench MOSFET (WMOSFET) with high switching performance

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. ◽

10.1109/ispsd.2003.1225222 ◽

2004 ◽

Cited By ~ 16

Author(s):

M. Darwish ◽

C. Yue ◽

Kam Hong Lui ◽

F. Giles ◽

B. Chan ◽

...

Keyword(s):

Switching Performance

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ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

3.6 mΩcm/sup 2/, 1726V 4H-SiC normally-off trenched-and-implanted vertical JFETs

Measurements and simulations of self-heating and switching with 4H-SiC power BJTs

Cost-effective approach in LDMOS with partial 0.35μm design into conventional 0.6μm process

Hot spot dynamics in quasivertical DMOS under ESD stress

Method for electrical detection of bond wire lift-off for power semiconductors

A high voltage CMOS ADSL line driver

Applying DMOSTs, diodes and thyristors above and below substrate in thin-layer SOI

1.7kV NPT V-groove clustered IGBT: fabrication and experimental demonstration

Development and demonstration of silicon carbide (SiC) inverter module in motor drive

A new power W-gated trench MOSFET (WMOSFET) with high switching performance

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
Latest Publications